Metal halide perovskite light-emitting diodes (PeLEDs) have gained significant interest for next-generation optoelectronic devices, since PeLEDs exhibit narrow emission bandwidth that allows for vivid and clear images based on their high color purity. [1][2][3][4][5][6] The emission color of PeLEDs is tunable in the visible and near-infrared (NIR) spectral regions and they offer low operating and turn-on voltages, along with promising efficiency values. [3,4,[7][8][9] In addition, thin films have shown nearunity photoluminescence quantum yield (PLQY) and population inversion at room temperature, [10][11][12][13][14] potentially allowing for electrically pumped lasers with various emission colors.There has recently been rapid growth in the external quantum efficiency (EQE) of PeLEDs, to values of over 20%, [9,[15][16][17][18][19][20][21][22][23][24][25][26][27] since early reports of PeLEDs in 2014 with efficiency below 0.25%. [28] Numerous strategies to improve the EQE of PeLEDs are being actively pursued in order to bring their performance in line with other, more established, LED technologies. [8] However, a disparity of refractive index (n) between organic transport layers (typically in the range of 1.6-1.8) and the perovskite emissive layer (≈2.3 near the emission wavelength) holds back performance. [29][30][31][32] Due to the high n of the perovskite layer, the maximum EQE of PeLEDs is limited by outcoupling efficiency and restricted to ≈20%, with the remainder of light being trapped within the thin film and substrate materials, as well as parasitic absorption. [31,32] Therefore, it is necessary to investigate alternative device architectures that are able to enhance outcoupling efficiency and realize direct benefits to EQE.In this study, we demonstrate EQE of 14.6% in methylammonium lead iodide (MAPbI 3 ) based red/NIR LEDs using a randomly distributed nanohole array (NHA) embedded in a SiN layer between the indium tin oxide (ITO) anode and glass substrate. The SiN layer with a high n of 2.02 at the peak emission wavelength possesses a high-index contrast with the voids of the NHA with n of 1.0. This layer effectively compensates for the high n of the perovskite emissive layer and aids outcoupling of waveguided and substrate modes. As a result, PeLEDs with NHAs show 1.64 times higher light extraction than PeLEDs without NHAs. Figure 1a displays the device structure of PeLEDs with and without NHAs, as well as the molecular structures of transport Organic-inorganic hybrid perovskite light-emitting diodes (PeLEDs) are promising for next-generation optoelectronic devices due to their potential to achieve high color purity, efficiency, and brightness. Although the external quantum efficiency (EQE) of PeLEDs has recently surpassed 20%, various strategies are being pursued to increase EQE further and reduce the EQE gap compared to other LED technologies. A key point to further boost EQE of PeLEDs is linked to the high refractive index of the perovskite emissive layer, leading to optical losses of more than 70% of ...