Optical-Energy Properties of CdS Thin Films Obtained by the Method of High-Frequency Magnetron Sputtering

Petrus, R. Yu.; Ільчук, Г. А.; Kashuba, A. I.; Semkiv, І. V.; Zmiiovska, E. O.

doi:10.1134/s0030400x19030160

Cited by 38 publications

(20 citation statements)

References 24 publications

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“…Al-doped ZnO (ZnO: Al) thin films were deposited on glass substrates with a size of 16×8×1.1 mm 3 by the method of high-frequency (HF) magnetron sputtering (~ 13.6 МHz) using a VUP-5M vacuum station (Selmi, Ukraine) [7,8]. As a target, the disc from sintered ZnO (purity of 99.99 %) powder with Al2O3 (2.5 wt.%) admixture was used.…”

Section: Methodsmentioning

confidence: 99%

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Kovalenko

Bovgyra

Dzikovskyi

et al. 2021

Phys. Chem. Solid St.

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The structural, electronic, and optical properties of zinc oxide thin films with Al-doping have been investigated experimentally and with density functional theory (DFT) calculations. Changes in properties of doped thin films, which are deposited on a glass substrate by a high-frequency magnetron sputtering method, are monitored using X-ray diffraction data and UV measurements. Our theoretical calculations show that the electronic structure of ZnO: Al can be well described by the DFT+U method. The XRD measurements demonstrated the formation of a pure single ZnO phase and Al atoms is well incorporated in the ZnO lattice. Also, we determine the optical constants such as optical dielectric function, refractive index, optical band gap values, extinction coefficient, and optical conductivity of the doping films through transmittance spectra. The calculated results show the change of lattice parameters Al-doped ZnO. The optical band gap of ZnO: Al is increased compared with pure ZnO. Besides, around the Fermi level of Al-doped ZnO was emerged the shallow donor states from mainly 3s-Al states. Our DFT calculations of optical properties Al-doped ZnO agree satisfactorily with the experimentally measured transmittance values.

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Section: Methodsmentioning

confidence: 99%

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Kovalenko

Bovgyra

Dzikovskyi

et al. 2021

Phys. Chem. Solid St.

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“…Формирование следующих зон, диспергированных от −9 до −6 eV, происходит от вклада d-состояний Cd. Это характерно и для других соединений кристаллов и тонких пленок группы A II B VI (A = Cd, B = S, Te) [14,34]. Вершина валентного комплекса практически сформирована из p-состояний Se с примесью p-состояний Cd.…”

Section: результаты и обсуждениеunclassified

“…Из кривой мнимой части диэлектрической функции видно, что первая оптическая критическая точка диэлектрической функции, которой является край фундаментального поглощения, возникает при энергии около 1.8 eV. При увеличении энергии наблюдается типичный быстрый рост ε 2 (ω) [14,34]. Можем наблюдать значительную анизотропию диэлектрической функции в зависимости от оптической поляризации (рис.…”

Section: результаты и обсуждениеunclassified

“…Исходя из расчетов спектра отражения (рис. 9) можем предположить, что пленки CdSe не чувствительны к ультрафиолетовому излучению как и пленки CdS [34]. На основе рассчитанных спектров действительной (4) и мнимой частей (3) диэлектрической функции получены спектральные зависимости показателей преломления (n) и коэффициента экстинкции (k):…”

Section: результаты и обсуждениеunclassified

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Особенности оптических и энергетических свойств тонких пленок CdSe

Ильчук¹,

Петрусь²,

Кашуба³

et al. 2020

Журнал Технической Физики

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The paper presents the results of experimental and theoretical studies of the optical and energy properties of thin CdSe films obtained by the closed space sublimation. The synthesis method, the results of structural and optical studies of thin CdSe films deposited on the surface of a quartz substrate are presented. The quality of the films was analyzed by x-ray diffraction, energy dispersive analysis and scanning electron microscopy. Within the framework of the pseudopotential method, the dynamics of changes in the parameters of the CdSe films electronic subsystem is theoretically studied. The direct-gap nature of the forbidden gap of the film is established. Based on the density of states, the genesis of the conduction band and the valence band is established. Using the Kramers – Kronig relation, we obtained spectra of optical dielectric functions, optical reflection, refractive and extinction indexes, which satisfactorily correlate with the obtained experimental data.

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“…Their additional resource is associated with a dependence of bandgap E g on selenium content x, which can be used specifically when forming gradient-like structures. It is known that the bandgap energy E g is equal to 1.44 eV for CdTe [7] and 1.68 eV for CdSe [8,9]. CdTe has a cubic (zincblende) structure [2,7,10], whereas CdSe can be materialized in either zinc-blende or hexagonal (wurtzite) structures under normal conditions, depending on the growth conditions [11,12].…”

Section: Introductionmentioning

confidence: 99%

Electronic band structure of cubic solid-state CdTe_1�xSe_x solutions

Ільчук¹,

Andriyevsky²,

Kushnir³

et al. 2021

Ukr. J. Phys. Opt.

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We report on the electronic band structure of solid-state solutions CdTe 1-x Se x (CTS, 0 < x ≤ 5/16) calculated in the framework of density functional theory. The structure of CTS is calculated following from the 'parent' binary compound CdTe, which is crystallized in a cubic phase. The bandgap of CTS is found to be of a direct type for all of the solid-state solutions under test. A decrease in the bandgap E g is found with increasing selenium content x. The E g (x) dependence reveals some deviations from a simple linear function. The free-carrier concentration increases with increasing selenium content. It is shown that interaction among the atoms of host matrix (CdTe) and substitution selenium atoms causes splitting of the valence bands into heavy-hole and light-hole subbands and spin-orbit splitting, while the conduction bands remain unaffected. The dependence of refractive index on the selenium content is obtained.

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Optical-Energy Properties of CdS Thin Films Obtained by the Method of High-Frequency Magnetron Sputtering

Cited by 38 publications

References 24 publications

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Особенности оптических и энергетических свойств тонких пленок CdSe

Electronic band structure of cubic solid-state CdTe_1�xSe_x solutions

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Optical-Energy Properties of CdS Thin Films Obtained by the Method of High-Frequency Magnetron Sputtering

Cited by 38 publications

References 24 publications

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Effect of Al doping on optical properties of ZnO thin films: theory and experiment

Особенности оптических и энергетических свойств тонких пленок CdSe

Electronic band structure of cubic solid-state CdTe1�xSex solutions

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Electronic band structure of cubic solid-state CdTe_1�xSe_x solutions