Optical enhancement of Au doped ZrO2 thin films by sol–gel dip coating method

Berlin, I. John; Joy, K.

doi:10.1016/j.physb.2014.10.013

Cited by 29 publications

(9 citation statements)

References 29 publications

(47 reference statements)

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“…These different phases can be tailored made in thin films achieve required hardness, refractive index and optical band gap. Various physical deposition techniques such as thermal oxidation of zirconium films [12,13], electron beam evaporation [14][15][16][17], pulsed laser deposition [18,19], vacuum arc deposition [20,21], DC magnetron sputtering [22][23][24][25], RF magnetron sputtering [26][27][28][29][30], molecular beam epitaxy [31], and chemical deposition methods namely, chemical bath deposition [32], spray pyrolysis [33], sol-gel process [34][35][36] and atomic layer deposition [37,38] were employed for the growth of zirconium dioxide thin films. Among these techniques, magnetron sputtering has the advantage in the growth of films on large area substrates and at low substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Thermally Oxidized Zirconium Dioxide Films

Sunke¹,

Uthanna²

2018

ILCPA

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Abstract. Zirconium oxide (ZrO 2 ) thin films were grown by thermal oxidation of metallic zirconium films deposited by sputtering of zirconium target by DC magnetron sputtering technique. The zirconium films were thermally oxidized in oxygen atmosphere at temperatures in the range 300-500 o C. The as-deposited and oxidized films were characterized for chemical composition by energy dispersive X-ray analysis, structure by X-ray diffraction, chemical binding configuration with Fourier transform infrared spectroscopy and optical absorption using UV-Vis NIR spectrophotometer. Metallic zirconium film was polycrystalline in nature with hexagonal structured Zr. The films oxidized at 300

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Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Thermally Oxidized Zirconium Dioxide Films

Sunke¹,

Uthanna²

2018

ILCPA

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“…Doping of aluminium in zirconium oxide films leads to tailor the refractive index for use in optoelectronic devices [8]. Golddoped zirconium oxide resulted strong visible light absorption due to localized surface plasmon resonance potential for application as switches and waveguides [9]. Santos et al [10] studied the structural and morphological properties of electrochemical-deposited Nb-doped ZrO 2 films and realized that the size of grains increased with an increase in niobium content.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen partial pressure on the structural, optical and electrical properties of magnetron sputtered Zr0.7Nb0.3O2 films

2021

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Thin films of zirconium niobium oxide (Zr 0.7 Nb 0.3 O 2 ) were deposited by DC reactive magnetron sputtering method on unheated quartz and p-silicon substrates at different oxygen partial pressures. XPS studies confirmed the presence of zirconium, niobium and oxygen associated with Zr 0.7 Nb 0.3 O 2 by showing the respective core-level binding energy values. The films formed at oxygen partial pressure of 4 × 10 -4 Torr were of single-phase Zr 0.7 Nb 0.3 O 2 with amorphous nature. Optical band gap of the films increased from 4.19 to 4.42 eV with an increase in oxygen partial pressure from 8 × 10 -5 to 4 × 10 -4 Torr. The Zr 0.7 Nb 0.3 O 2 films formed at 4 × 10 -4 Torr were also annealed in air at different temperatures in the range from 500 to 750 °C. The films annealed at temperature 600 °C showed a weak diffraction peak of tetragonal Nb 2 O 5 with amorphous background. Further increase in temperature to 750 °C, the films transformed to polycrystalline with tetragonal structure. Shift in the diffraction angles revealed that niobium substituted the zirconium and form Zr 0.7 Nb 0.3 O 2 . The band gap of the films increased from 4.64 to 4.81 eV with the increase in annealing temperature from 600 to 750 °C. Metal-oxide-semiconductor (MOS) gate capacitors with configuration Al/Zr 0.7 Nb 0.3 O 2 /p-Si were deposited and studied the capacitance-voltage and current-voltage characteristics. The dielectric constant of the films increased from 15 to 23 with increase in annealing temperature from 600 to 750 °C. The leakage current density of the as-deposited MOS capacitors was 2 × 10 -5 A/cm 2 and decreased to 4 × 10 -7 A/cm 2 with the increase in annealing temperature to 750 °C due to improvement in the crystallinity and decrease in defect density in the films.

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“…At higher temperature that is [2300°C it has cubic structure, at intermediate temperature it has tetragonal structure and at low temperature that is\1100°C, it exists in monoclinic structure [15]. Recently, zirconia has created a great attention due to its supreme technological significance, because of its high refractive index, high thermal expansion coefficient, excellent oxygen ion conductivity, high dielectric constant, high corrosion resistance, high chemical stability, great toughness, microbial resistance [16][17][18][19][20][21][22][23][24], etc., which makes this SMO to emanate as an attractive material for massive functions in photonics, gas sensors, bio-sensor, thermal barrier coatings, fuel cells, dental medicine, buffer layer in high T c superconductors and so on [25][26][27][28][29][30][31]. The REDOX movement and the quality of high ionic exchange drive the metal as useful as catalyst [18].…”

Section: Introductionmentioning

confidence: 99%

“…The sensing attributes of metal oxide-based sensor hinge on its physical and chemical properties, which in turn strongly count on the synthesis procedure, deposition approach and dopant inclusion [40]. SMO blended with various dopants, adhesives and binders has been reported earlier [19,[41][42][43]. The process of doping is used to boost up the catalytic activity of the metal oxide.…”

Section: Introductionmentioning

confidence: 99%

Effect of Cr on ZrO2 nanostructures for gas sensing investigation

Hemalatha¹,

Gopalakrishnan

2021

Bull Mater Sci

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This study deals with the synthesis, characterization and gas sensing interrogations of pure and Cr (5 and 15%) doped ZrO 2 . The conventional precipitation route is committed for the synthesis of the pure and Cr-doped ZrO 2 powder and the films were formulated by drop casting mode by exploiting ZrOCl 2 Á8H 2 O as precursor, CrO 3 as doping agent and NH 4 OH as stabilizing agent. The structural properties, optical properties and electrical properties of the handled samples were anatomized by X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-differential reflectance spectroscopy (UV-DRS) spectroscopy, photoluminescence (PL) studies and current-voltage (I-V) measurement. The structure and size of the crystal were resolved by XRD. The uniform spherical-like morphology of the particles was favoured by SEM investigation. The bandgap of the materials was reckoned by UV-DRS report. The occupancy of oxygen vacancies in the samples was conceded by PL studies. The ohmic contact of the samples with the electrodes has been professed by I-V measurements. The gas sensing competency of the drop casted films were monitored by the exposure of the different concentrations of reducing gases like ammonia, acetone, ethanol, formaldehyde and xylene. The output data render that all the processed samples exhibits a peak response towards ammonia gas, exclusively 15% of Cr-doped ZrO 2 sensor shows an utmost gas response of about 48%, excellent response time and recovery time of about 68 and 72 s, respectively, among other samples. Thus, the fusion of Cr stimulates the gas sensing proficiency of ZrO 2 .

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Optical enhancement of Au doped ZrO2 thin films by sol–gel dip coating method

Cited by 29 publications

References 29 publications

Structural and Optical Properties of Thermally Oxidized Zirconium Dioxide Films

Structural and Optical Properties of Thermally Oxidized Zirconium Dioxide Films

Influence of oxygen partial pressure on the structural, optical and electrical properties of magnetron sputtered Zr0.7Nb0.3O2 films

Effect of Cr on ZrO2 nanostructures for gas sensing investigation

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