Optical evidence for donor behavior of Sb in ZnO nanowires

Kumar, E. Senthil; Mohammadbeigi, F.; Alagha, S.; Deng, Zhiwei; Anderson, I.; Wintschel, T.; Watkins, Simon P.

doi:10.1063/1.4799385

Cited by 18 publications

(9 citation statements)

References 20 publications

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“…Up to now, we have shown that these complexes should not be suitable to create p-type ZnO. Nonetheless, there are some speculations about their possible presence in experiments 33,34 and so it is interesting to check whether these kinds of defects are likely to be found or not. For the cluster to form, it is essential that their binding en-…”

Section: Stability Of Vacancy Related Complexesmentioning

confidence: 97%

ComprehensiveAb InitioStudy of Doping in Bulk ZnO with Group-V Elements

Petretto

Bruneval

2014

Phys. Rev. Applied

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Despite the lack of reproducible experimental confirmation, group-V elements have been considered as possible sources of p-type doping in ZnO in the form of simple and complex defects. Using ab initio calculations, based on state-of-the-art hybrid exchange-correlation functional, we study a wide range of defects and defect complexes related with N, P, As, and Sb impurities. We show that none of the candidates for p-type doping can be considered a good source of holes in the valence band due to deep acceptor levels and low formation energies of compensating donor defects. In addition, we discuss the stability of complexes in different regimes.

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Section: Stability Of Vacancy Related Complexesmentioning

confidence: 97%

ComprehensiveAb InitioStudy of Doping in Bulk ZnO with Group-V Elements

Petretto

Bruneval

2014

Phys. Rev. Applied

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“…High-temperature vapor-phase methods have been commonly used to fabricate p-type Sb-doped ZnO, [16][17][18][19] while aqueous chemical methods, especially electrochemical deposition, are rarely employed. A method that introduces the dopant in low-temperature synthesis is attractive because of its low cost and ease of implementation.…”

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confidence: 99%

Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

Liang

Chuang

et al. 2015

Applied Physics Letters

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To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (SbZn) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.

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“…Other research groups reported the same conclusion, which indicates that Sb atoms have likely doped into the Zn sites in ZnO:Sb NWs. 16,34 In this case, Sb is expected to act as a donor in the ZnO host. However, we cannot decisively conclude that the Sb atoms act as donors in these as-grown ZnO:Sb wires, since these wires have mixed phases.…”

Section: Resultsmentioning

confidence: 99%

“…ZnO:Sb NWs. 16,28 The results were discussed in terms of the Sb dopant mechanism and its lattice position in the ZnO host.…”

Section: Introductionmentioning

confidence: 99%

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Hot probe measurements of n-type conduction in Sb-doped ZnO microwires

Alsmadi

Masmali

Jia

et al. 2015

Journal of Applied Physics

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The charge carriers type in antimony-doped ZnO (ZnO:Sb) microwires was studied using the hot probe technique. The wires were grown by a simple thermal evaporation method. Contrary to the expected p-type behavior reported for Sb doped ZnO thin films and nanowires, our hot probe measurements of representative single Sb-doped ZnO wires show a stable n-type behavior. The hot probe technique is a simple and efficient way to determine the charge carrier type from thermoelectric measurements on a single semiconductor wire and could offer an alternative to Hall effect measurements. The technique relies on creating a temperature gradient across the wire (i.e., heating one side of the wire relative to the other) and monitoring the resulting open-circuit voltage between the two ends. We also performed Energy Dispersive X-ray Spectroscopy measurements to identify and monitor the elemental composition in these ZnO:Sb wires.

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Optical evidence for donor behavior of Sb in ZnO nanowires

Cited by 18 publications

References 20 publications

ComprehensiveAb InitioStudy of Doping in Bulk ZnO with Group-V Elements

ComprehensiveAb InitioStudy of Doping in Bulk ZnO with Group-V Elements

Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

Hot probe measurements of n-type conduction in Sb-doped ZnO microwires

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