Optical evidence of many-body effects in the zincblende Al
	    
	     x
	    
	  Ga
	    
	     1−x
	    
	  N alloy system

Baron, Elias; Feneberg, Martin; Goldhahn, R.; Deppe, Michael; Tacken, Fabian; As, D. J.

doi:10.1088/1361-6463/abb97a

Cited by 2 publications

(2 citation statements)

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“…The frequency difference calculated based on the values for c-GaN is in reasonable agreement with the frequency difference between the two Raman features observed in the spectra. Although the transverse (TO) modes of zincblende materials are forbidden in the backscattering from (100) surfaces, corresponding modes can be discerned in the spectra of the binary materials at 551 cm −1 (c-GaN 60,61,69 ) and 458 cm −1 (c-InN 62,65,66 ). No clear signals can be discerned for the alloy thin films; this is because the anticipated Raman signals are covered by the strong signals of the LO phonon of the Si substrate and the TO mode of the c-GaN buffer layer.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

Zscherp,

Jentsch,

Müller

et al. 2023

ACS Appl. Mater. Interfaces

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The lack of internal polarization fields in cubic group-III nitrides makes them promising arsenic-free contenders for next-generation high-performance electronic and optoelectronic applications. In particular, cubic In x Ga 1−x N semiconductor alloys promise band gap tuning across and beyond the visible spectrum, from the near-ultraviolet to the near-infrared. However, realization across the complete composition range has been deemed impossible due to a miscibility gap corresponding to the amber spectral range. In this study, we use plasma-assisted molecular beam epitaxy (PAMBE) to fabricate cubic In x Ga 1−x N films on c-GaN/AlN/3C-SiC/Si template substrates that overcome this challenge by careful adjustment of the growth conditions, conclusively closing the miscibility gap. X-ray diffraction reveals the composition, phase purity, and strain properties of the In x Ga 1−x N films. Scanning transmission electron microscopy reveals a CuPt-type ordering on the atomistic scale in highly alloyed films with x(In) ≈ 0.5. Layers with much lower and much higher indium content exhibit statistical distributions of the cations Ga and In. Notably, this CuPt-type ordering results in a spectrally narrower emission compared to that of statistically disordered zincblende materials. The emission energies of the films range from 3.24 to 0.69 eV and feature a quadratic bowing parameter of b = 2.4 eV. In contrast, the LO-like phonon modes that are observed by Raman spectroscopy exhibit a one-mode behavior and shift linearly from c-GaN to c-InN.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

Zscherp,

Jentsch,

Müller

et al. 2023

ACS Appl. Mater. Interfaces

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“…The splitting of the conduction band promotes a decrease in optical adsorption due to transitions between its levels. A strong dispersion of the s-level of the conduction band, which is characteristic of most transparent conducting oxides, leads to a shift of the optical absorption edge towards higher energies with an increase in the concentration of charge carriers [34][35][36][37]. The filling of the dispersive conduction band leads to an increase in the energy required for the transition of an electron from the valence band to the conduction band (Figure 13).…”

Section: Influence Of the Chemical Parameters Of Film-forming Solutio...mentioning

confidence: 99%

The Effect of pH Solution in the Sol–Gel Process on the Structure and Properties of Thin SnO2 Films

et al. 2022

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The synthesis of surface-active structures is important for creating many applications. The structural formation of SnO2 thin films in the range from 1.4 to 1.53 pH is studied in this work. This process occurs on the surface of the sample in the range of 1.4 to 1.49 and in the volume in the range of 1.51 to 1.53. SnO2 is formed after annealing at 400 ∘C, according to XRD. Doping NH4OH to solution stimulates particle coagulation and gel formation. All of these have an impact on the transparency of samples investigated by spectrophotometric methods. By increasing the pH, the resistance raises at room temperature. The Eg calculation along the fundamental absorption edge shows that it is greater than 3.6 eV’ for SnO2 films. According to the Burstein–Moss effect, a change of the bandgap is related to the increased concentration of the free charge carriers. Elemental analysis has shown that chlorine ions are considered to be additional sources of charge carriers. The value pH = 1.49 is critical since there is a drastic change in the structure of the samples, the decrease in transparency is replaced by its increase, and the energy of activation of impurity levels is changed.

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Optical evidence of many-body effects in the zincblende Al x Ga 1−x N alloy system

Cited by 2 publications

References 50 publications

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

The Effect of pH Solution in the Sol–Gel Process on the Structure and Properties of Thin SnO2 Films

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Optical evidence of many-body effects in the zincblende Al x Ga 1−x N alloy system

Cited by 2 publications

References 50 publications

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN

The Effect of pH Solution in the Sol–Gel Process on the Structure and Properties of Thin SnO2 Films

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Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN