Optical evidence of Stark effect in single-walled carbon nanotube transistors

Takenobu, Taishi; Murayama, Y.; Iwasa, Yoshihiro

doi:10.1063/1.2425009

Cited by 33 publications

(28 citation statements)

References 22 publications

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“…Indeed, it is very frequently adopted in the study of excited-state structures in 1D insulators such as conjugated polymers [16,17] and 1D Mott-Hubbard insulators [18]. In the case of SWNT, two papers are devoted to EA measurements; however, the two-photon states are not revealed [19,20]. Theoretical studies suggest that EA measurements in SWNT are quite informative because the Franz-Keldysh or Fano effects may be observed on continuum bands [8,21,22].…”

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confidence: 99%

Direct Observation of Dark Excitons in Micelle-Wrapped Single-Wall Carbon Nanotubes

et al. 2008

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We have performed electroabsorption spectroscopy on micelle-wrapped single-wall carbon nanotubes. In semiconducting nanotubes, many oscillating structures composed of the increase and decrease of absorption are observed in the spectra in the region of the first and second absorption bands, E11 and E22. The spectral shape is reproduced mainly by the second-derivative curve of the absorption spectrum, which indicates the presence of nearly degenerate bright and dark excitonic states.

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confidence: 99%

Direct Observation of Dark Excitons in Micelle-Wrapped Single-Wall Carbon Nanotubes

et al. 2008

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“…In our case, we estimate an effective transverse applied field on the order of 0.01 MV/cm, implying a Stark effect of at most 0.3 meV [67], far less than our observed spectral shifts. In addition, prior experimental investigations reported the absence of any detectable spectral shifts for transverse electric fields up to 0.2 MV/cm [68], and a shift of 0.35 meV for a transverse field of 1.6 MV/cm [69]. On this basis, we ignore the role of the dc Stark effect in our measurements.…”

Section: B Exciton Energy Shiftmentioning

confidence: 87%

Tunable electronic correlation effects in nanotube-light interactions

et al. 2015

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Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to strongly modify the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well as line broadening, as the carrier density is increased. The results demonstrate the role of screening of many-body electronic interactions on the different length scales, a feature inherent to quasi-1D systems. Our findings further demonstrate the possibility of electrical tuning of optical transitions and provide a basis for understanding of various optical phenomena in carbon nanotubes and other quasi-1D systems in the presence of charge carrier doping.

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“…The lack of electronic purity introduces high conductance and screening from the metallic nanotube impurities which prevents reliable gate modulation. 22 However, over the past decade several advances have been made in purification and deposition of s-SWCNT films which renders this possible in our study. [23][24][25][26][27][28][29] In this paper, we determine the gate-tunability of the basic optical constants of ultrathin s-SWCNT films, including refractive index n, extinction coefficient κ, and absorption coefficient α.…”

Section: Introductionmentioning

confidence: 99%

Giant Gate-Tunability of Complex Refractive Index in Semiconducting Carbon Nanotubes

et al. 2020

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Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-films and other quantum confined materials, these constants have been measured accurately. However, the optical constants of single walled carbon nanotube (SWCNTs) as a function of electrostatic tuning are yet to be measured due to lack of electronic purity and spatial homogeneity over large areas. Here, we measure the basic optical constants of ultrathin high-purity (>99%) -2 -semiconducting single wall carbon nanotube (s-SWCNT) films with spectroscopic ellipsometry. We extract the gate-tunable complex refractive index of s-SWCNT films and observe giant modulation of the real refractive index (~11.2% or an absolute value of > 0.2) and extinction coefficient (~11.6%) in the near-infrared (IR) region (1.3-1.55 μm) induced by the applied electric field significantly higher than all existing electro-optic semiconductors in this wavelength range. We further design a multilayer IR reflection phase modulator stack by combining s-SWCNT and monolayer MoS2 heterostructures that can attain >45° reflection phase modulation at 1600 nm wavelength for < 200 nm total stack thickness. Our results highlight s-SWCNTs as a promising material system for infrared photonics and electro-optics in telecommunication applications.

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Optical evidence of Stark effect in single-walled carbon nanotube transistors

Cited by 33 publications

References 22 publications

Direct Observation of Dark Excitons in Micelle-Wrapped Single-Wall Carbon Nanotubes

Direct Observation of Dark Excitons in Micelle-Wrapped Single-Wall Carbon Nanotubes

Tunable electronic correlation effects in nanotube-light interactions

Giant Gate-Tunability of Complex Refractive Index in Semiconducting Carbon Nanotubes

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