Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

Boer, W. D. A. M. de; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Yoshihiro; Tanabe, Setsuhisa; Stallinga, Peter

doi:10.1038/srep05235

Cited by 38 publications

(21 citation statements)

References 24 publications

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“…If the carrier trap lifetimes are relatively short (compared to the Eu emission) the observed PL QE will generally be lower in cw excitation, as these traps can trap multiple carriers before Eu ions emit and can be re-excited again. This explains why much lower values of the external QE efficiency has been found before under low power cw excitation 17 . Also in that work, under pulsed excitation, a much lower value was found for the PL QE (~0.03) for a photon fluence of 4.6 x 10 16 cm -2 , which is actually in line with the determined values here.…”

Section: External Photoluminescence Quantum Yieldmentioning

confidence: 59%

“…Multiple processes compete with radiative deexcitation of the Eu 3+ ions and decrease the efficiency of 4f-4f luminescence, most prominently at elevated temperatures 18 17,19 . In this case only the available thermally excited free carriers at elevated temperatures, and possibly nearby thermally excited states, contribute to the nonradiative deexcitation of Eu 3+ ions.…”

Section: Discussionmentioning

confidence: 99%

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Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN

et al. 2020

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The excitation efficiency and external luminescence quantum efficiency of trivalent Eu 3+ ions doped into gallium nitride (GaN) was studied under optical and electrical excitation. For small pump fluences it was found that the excitation of Eu 3+ ions is limited by an efficient carrier trap that competes in the energy transfer from the host material. For large pump fluences the limited number of highefficiency Eu 3+ sites, and the small excitation cross-section of the majority Eu 3+ site, limit the quantum efficiency. At low temperatures under optimal excitation conditions, the external luminescence quantum efficiency reached a value of 46%. These results show the high potential for this material as an efficient light emitter, and demonstrates the importance of the excitation conditions on the light output efficiency.

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Section: External Photoluminescence Quantum Yieldmentioning

confidence: 59%

Section: Discussionmentioning

confidence: 99%

Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN

et al. 2020

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“…Both of the prominent emission peaks excited at 220 nm and 223 nm are observed at around the same wavelengths of 590 and 610 nm, respectively. Based on our calculation carried out similarly to de Boer et al, the quantum efficiency -the ratio between number of photons created and the number of photons absorbed is estimated to be close to 100% [25].…”

Section: Photoluminescence Spectra Analysismentioning

confidence: 76%

Photoluminescence Property of Eu3+ doped CaSiO3 Nano-phosphor with Controlled Grain Size

Niraula¹,

Rizal²

2018

Colloids and Interfaces

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A series of Eu3+ doped CaSiO3/SiO2 nano-phosphor powder of controlled grain size, crystalline structure, and chemical composition were synthesized using the microemulsion technique. The morphology, size, and shape of the synthesized nanophosphorous powder were investigated using transmission electron microscopy and X-ray diffraction (XRD) analysis. XRD profiles of samples sintered over 600 °C, suggested phase shift from amorphous powder grain to more ordered polycrystalline powder of triclinic type wollastonite, CaSiO3, with preferred crystal phase orientation of (112) and tetragonal type cristobalites of SiO2. The grain size, crystallinity, and chemical composition of the host matrix, activator and sensitizer strongly affected both the absorption and emission bands of these samples. The amplitude of both the orange and red emission bands significantly increased with sintering temperature. The emission band is red-shifted with decreasing grain sizes. These bands displayed good sensitivity to ionic concentration of the Si4+, Ca2+, and Eu3+. With increasing Ca2+ ion concentration both the intensity of the red photoluminescence (PL) band increased and a concentration quenching observed. Increase in Si4+ ion concentration led to quenching in PL intensity of both the orange and red bands, whereas the amplitude of the blue-band slightly increased. With increasing Eu3+ ion concentration the red-band initially increased whereas it started decreasing at higher sample concentration. In the presence of Ca2+ ion as a sensitizer, the sample showed a remarkable PL property-including–about 100% photon conversion efficiency and a two-fold increase in excitation and emission photons.

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“…[1][2][3][4][5][6] Blue and green light can be obtained using the well-established band gap control of the compound semiconductor InGaN, while red light is difficult to obtain. Therefore, GaN:Eu has the potential to be an indispensable material for a GaN-based monolithic display 7 that uses integrated emission sources for the three primary colors.…”

Section: Introductionmentioning

confidence: 99%