Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic ellipsometry

Jellison, G. E.; Chisholm, M. F.; Gorbatkin, S. M.

doi:10.1063/1.109067

Cited by 253 publications

(123 citation statements)

References 17 publications

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“…24 The fit range of the data was limited to the interference part of the spectrum ͑1.5-3.2 eV͒, where fairly accurate parameter values can be obtained by assuming stan- dard bulk c-Si for the crystalline phase. 10 The surface roughness determined by modeling was ϳ2.0Ϯ0.5 nm for all samples, which is in good agreement with the AFM values. This approach cannot cover the high-energy range where the broadened CP significantly affects the estimation of f c .…”

Section: Determination Of Layer Thickness and Crystalline Volumesupporting

confidence: 73%

“…Another major feature in the imaginary part of the dielectric function ( i ) occurs clearly near 4.2 eV, where an obvious shift of the peak with respect to c-Si is observed. 10 The reason for the deformation of this peak can be more various because the feature is due to several transitions. CP broadening is discussed in more detail by Jellison et al 11 ͑ellipsometry͒ and Viña and Cardona 12 ͑calculation͒.…”

Section: Introductionmentioning

confidence: 99%

“…Near and above the direct band-gap edge ͑ϳ3.4 eV͒, the feature is dominated by direct transitions. 10 For the CP in this regime, broadening used to be explained by the scattering at the small grain boundaries imposing a short time for an excited carrier to reach and to be scattered by the grain boundary, thus limiting the excitedstate lifetime. Another major feature in the imaginary part of the dielectric function ( i ) occurs clearly near 4.2 eV, where an obvious shift of the peak with respect to c-Si is observed.…”

Section: Introductionmentioning

confidence: 99%

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Optical characteristics of intrinsic microcrystalline silicon

2002

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We studied the optical properties of intrinsic microcrystalline silicon ( c-Si:H) deposited by very high frequency plasma-enhanced chemical-vapor deposition system at different silane concentrations ͑SC͒ by spectroscopy ellipsometry and photothermal deflection spectroscopy. The bulk property of the samples was probed because the impact of the surface layer was significantly reduced by mechanical polishing. At high SC, we extracted the optical characteristics of the disordered part by assuming a superposition of ideal c-Si and mathematically generated amorphous function. At low SC, we studied the reason for a large deviation of absorption coefficient in the energy range between 1.6 and 3.2 eV from the value predicted by effective medium theory. We considered the scattering loss by the inhomogeneity of c-Si:H and introduce the dense medium radiative transfer formalism to an optical scattering simulation. We simulated the Stokes vector of pand s-polarized light at oblique incidence. From this formalism, we could predict depolarization of p and s wave by scattered incoherent light. Further, we also suggested strain effect as the second possible reason for the enhanced absorption near the onset of the indirect transition in highly crystalline c-Si:H.

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Section: Determination Of Layer Thickness and Crystalline Volumesupporting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical characteristics of intrinsic microcrystalline silicon

2002

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“…The layer structure of the polycrystalline silicon wafers has been modeled using a single-crystalline Si (c-Si) substrate, an SiO 2 layer created by thermal oxidation, a polycrystalline silicon layer with an effective medium composition of fine-grained polycrystalline silicon (nc-Si, [12]), c-Si and void (for density correction), as well as a surface roughness layer with 50% void and 50% layer material. Fig.…”

Section: Resolving Vertical Featuresmentioning

confidence: 99%

Resolving lateral and vertical structures by ellipsometry using wavelength range scan

Petrik¹,

Agócs²,

Volk³

et al. 2014

Thin Solid Films

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For most thin film structures, when changing the wavelength range to fit ellipsometric spectra, the values of the fitted parameters also change to a certain extent. The reason is that compared with the ellipsometric sensitivity many thin films are vertically non-uniform. In absorbing films with significant dispersion in the used wavelength range the penetration depth of probing light can show large variations depending on the wavelength. Consequently, the value of a fitted parameter for a certain wavelength range is a weighted sum of structural information over different depth ranges corresponding to the different wavelengths. When changing the wavelength range, the range of penetration depths can be adjusted. Next, the fitted values can be plotted as a function of the probed depth range calculated directly from the determined or tabulated extinction coefficients. We demonstrate the results on effects is when the lateral feature sizes approach the wavelength of the probing light. In this case the effective medium method is not valid any more, scattering and depolarization occurs. When scanning the wavelength range, the limit wavelength of the onset of scattering can be found, and used for the determination of the corresponding critical lateral period length.

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“…[59]. The dielectric functions of poly-Si with fine and large grains from reference [60] were used, thereafter denoted as ''p-Si-l'' (large grains) and ''p-Sif'' (fine grains) in the models. Surface morphology was observed by atomic force microscopy (AFM) in the intermittent contact mode (IC-AFM).…”

Section: Experimental Approachmentioning

confidence: 99%