Optical gain and loss processes in GaInAs/InP MQW laser structures

Zielinski, E.; Keppler, Frank; Hausser, S.; Pilkuhn, M. H.; Sauer, R.; Tsang, W. T.

doi:10.1109/3.29276

Cited by 40 publications

(3 citation statements)

References 33 publications

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“…Techniques using segmented devices have also been used to obtain gain spectra. 6,7 Optical gain spectra that use the variable stripe length method 8,9 or transmission experiments, 10 and derived by optical gain spectroscopy, are also available.…”

mentioning

confidence: 99%

Determination of single-pass optical gain and internal loss using a multisection device

Thomson

Summers

Hulyer

et al. 1999

Applied Physics Letters

110

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We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm Ϫ1 and peak gain values up to 4000 cm Ϫ1 for current densities up to 4 kA cm Ϫ2 .

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mentioning

confidence: 99%

Determination of single-pass optical gain and internal loss using a multisection device

Thomson

Summers

Hulyer

et al. 1999

Applied Physics Letters

110

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show abstract

“…The peak wavelengths of the two structures are nearly equal to 358 nm, while the peak wavelength is small red shifted from 357.83 nm for reference structure to 358.07 nm for new structure. The slight peak position redshift in the lasing spectra of new structure is about 0.24 nm at 8.9 kA/cm 2 , which can be ascribed to the bandgap shrinkage [21,22]. The effective bandgap of new structure for optical gain calculations is reduced due to the impact of step-graded QBs.…”

Section: Simulation Results and Discussionmentioning

confidence: 92%

Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

Cai

Kang

2016

Superlattices and Microstructures

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“…The transverse field distribution of the laser supermode is calculated numerically with the FDTD method (Taflove & Hagness, 2005; QWED) and analytically, using the non-orthogonal mode theory applied to the calculation of the effective waveguide structure. It is assumed that the distributed losses coefficient is equal to  L = 200 cm -1 (Zielinski et al 1989;Lu et al, 2008), whereas the output power to saturation power ratio is P out / P s = 10 -6 (Lu et al, 2009;Susaki et al, 2008;van den Hoven, 1996). In principle, the minimum of the calculated characteristics indicates an optimum value of the mirror reflection coefficient r 2 of an output mirror, for which maximum output power efficiency is achieved.…”

Section: Laser Gain Characteristicsmentioning

confidence: 99%