Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide

Han, Hyeuk Jin; Seo, Seung Young; Shin, Jung H.

doi:10.1063/1.1419035

Cited by 173 publications

(112 citation statements)

References 18 publications

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“…With such an idea, Er 3+ doped materials were fabricated and embedded in MOS devices to develop Si-based sources emitting at 1.54 m [10,11]. It was demonstrated later that the inclusion of Si-ncs in Er 3+ doped silica resulted in efficient room-temperature Er 3+ luminescence under optical pumping [12][13][14][15]. The much larger effective absorption cross-section of Si-ncs with regard to Er 3+ ions and the efficient coupling between them was an attractive perspective for the near future.…”

Section: Introductionmentioning

confidence: 99%

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Ramírez¹,

Jambois²,

Berencén³

et al. 2012

Materials Science and Engineering: B

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a b s t r a c tWe present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er 3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 • C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er 3+ ions have been extracted.

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Section: Introductionmentioning

confidence: 99%

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Ramírez¹,

Jambois²,

Berencén³

et al. 2012

Materials Science and Engineering: B

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“…Conventionally, cluster size distribution and density have been controlled by varying either the excess silicon concentration and/or annealing conditions. [6][7][8] It is assumed that the growth and phase separation of Si-ncs is driven by annealing. 9 However, we present results in this paper that point to a significant role for film stress in controlling the formation of nanoclusters.…”

Section: Introductionmentioning

confidence: 99%

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Ahmad

Temple

Kallis

et al. 2008

Journal of Applied Physics

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Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.

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“…Much work in this area was motivated by the prospect of room-temperature light sources [68] for CMOS and telecommunications [69], and in particular room temperature lasers. This includes various point defects in Si including Er [70][71][72][73] and other emissive centers giving rise to electric-dipole-mediated transitions [67,[74][75][76][77][78][79][80][81][82], as well as band-edge or Si nanocrystal-based emission processes [83][84][85]. While the efficiencies of many of these emitters fall off exponentially with increasing temperature, the SNSPDs required for this application operate at cryogenic temperatures where many point defects have suitable efficiencies.…”

Section: G Electrically-injected Light Sourcementioning

confidence: 99%

Superconducting Optoelectronic Circuits for Neuromorphic Computing

et al. 2017

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Neural networks have proven effective for solving many difficult computational problems. Implementing complex neural networks in software is very computationally expensive. To explore the limits of information processing, it will be necessary to implement new hardware platforms with large numbers of neurons, each with a large number of connections to other neurons. Here we propose a hybrid semiconductor-superconductor hardware platform for the implementation of neural networks and large-scale neuromorphic computing. The platform combines semiconducting few-photon light-emitting diodes with superconducting-nanowire single-photon detectors to behave as spiking neurons. These processing units are connected via a network of optical waveguides, and variable weights of connection can be implemented using several approaches. The use of light as a signaling mechanism overcomes fanout and parasitic constraints on electrical signals while simultaneously introducing physical degrees of freedom which can be employed for computation. The use of supercurrents achieves the low power density necessary to scale to systems with enormous entropy. The proposed processing units can operate at speeds of at least 20 MHz with fully asynchronous activity, light-speed-limited latency, and power densities on the order of 1 mW/cm 2 for neurons with 700 connections operating at full speed at 2 K. The processing units achieve an energy efficiency of ≈ 20 aJ per synapse event. By leveraging multilayer photonics with deposited waveguides and superconductors with feature sizes > 100 nm, this approach could scale to systems with massive interconnectivity and complexity for advanced computing as well as explorations of information processing capacity in systems with an enormous number of information-bearing microstates.

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Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide

Cited by 173 publications

References 18 publications

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Superconducting Optoelectronic Circuits for Neuromorphic Computing

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