2000
DOI: 10.1070/qe2000v030n08abeh001787
|View full text |Cite
|
Sign up to set email alerts
|

Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

Abstract: In this article, based on a recent theorem by Lieb er al, we shall prove two theorems on Ihe momentum distribution functions of the half-filled Hubbard model on a ddimensional simple cubic lattice in a mathematically rigorous way. More precisely, we shall first show that the half-filled positive-U and negative4 Hubbard models have the same momentum distribution functions n (4) and n+(q). Then, we will show that n.(q) are symmetric functions about the value E = 3. Fmally. we shall briefly discuss some possible … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
6
0

Year Published

2001
2001
2016
2016

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 12 publications
(6 citation statements)
references
References 1 publication
0
6
0
Order By: Relevance
“…Semiconductor quantum dots (QDs) have been widely used for various ultrafast optoelectronic devices such as single electron transistors, bistable elements, modulators, and lasers [117][118][119][120][121][122]. Several studies on quantum dot (QD) systems were carried out in the last decade, mainly on Cd chalcogenides [123].…”
Section: Quantum Dot and Dynamic Scaling Behavior Of Sno 2 Nanocrystalsmentioning
confidence: 99%
“…Semiconductor quantum dots (QDs) have been widely used for various ultrafast optoelectronic devices such as single electron transistors, bistable elements, modulators, and lasers [117][118][119][120][121][122]. Several studies on quantum dot (QD) systems were carried out in the last decade, mainly on Cd chalcogenides [123].…”
Section: Quantum Dot and Dynamic Scaling Behavior Of Sno 2 Nanocrystalsmentioning
confidence: 99%
“…However, they have low damage threshold and cannot sustain strong laser pumping for a long time. Quantum dots (QDs) have been reported to have emission cross sections as high as 7 × 10 −15 cm 2 [166] (at the level of the best performing dye molecules). However, the reported experimental values of the optical gain in the QD based amplifying media do not exceed 1000 cm −1 [167].…”
Section: Current and Future Challengesmentioning
confidence: 99%
“…Recently, InAs/In x Ga 1Àx As quantum dots-in-a-well (DWELL) structures have attracted much attention due to their advantages for photoelectric applications [1,2]. A lot of studies have been done on the properties of DWELL structure in which quantum dots (QDs) are surrounded by a quantum well [3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%