Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence

Ahmed, Amira Ben; Saidi, Hosni; Msahli, Melek; Ridene, Saïd

doi:10.1109/jqe.2017.2678206

Cited by 4 publications

(4 citation statements)

References 38 publications

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“…The effect of CdSe nanoparticles on the fluorescence spectra of conjugate polymer Ply(3-hexylthiophene-2,5-diyl)(P3HT) were investigated by experiment and simulated calculation, results showed the fluorescence intensity is significantly decreased in both solution and solid films by the incorporation of CdSe Nps and calculations were found to be in good agreement with the experimental data[14–16]. Polymer/nanoparticles composites (also known as nano-dielectrics) are essentially a mixture of nanoparticles and polymers, and their properties are determined by size, shape, distribution, filling area of nanoparticles, molecular weight of polymer molecules, and their interactions between the nanoparticles and polymer matrices[17].…”

Section: Introductionmentioning

confidence: 55%

Molecular Dynamics Simulation Study of Eucommiaulmoides GUM/AG Nanoparticle Composites

et al. 2017

Advanced Composites Letters

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A study of eucommia ulmoides gum (EUG)/Ag nanoparticle (NP) composites by molecular dynamics (MD) simulations to understand their structure, polarizability, thermodynamic properties, and mechanical properties is proposed. The effects of simulation temperature and Ag NPs size on these parameters were also studied. The results revealed that the composites exhibited an isotropic amorphous structure, and the distribution uniformity of the Ag NPs was enhanced by changing the simulation temperature. Several atoms of the Ag NPs were in an amorphous state, and a polarized layer was observed on the interface between the Ag NPs and the eucommia ulmoide matrix. The interface size increased as the temperature increased and nanoparticles size decreased. The isochoric heat capacity and thermal pressure coefficient of the EUG/Ag-NP composites exhibited significant size effects and improved thermal interferences, which indicated that the presence of the Ag NPs had a positive effect on the mechanical properties of the EUG.

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Section: Introductionmentioning

confidence: 55%

Molecular Dynamics Simulation Study of Eucommiaulmoides GUM/AG Nanoparticle Composites

et al. 2017

Advanced Composites Letters

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“…where V is the volume of a unit cell of the material. The lattice constant for a given pressure p can be written as [8] a p ð Þ…”

Section: Hydrostatic Pressure Dependent K á P Hamiltonianmentioning

confidence: 99%

“…For low dimensional systems such as QDs and QWs of dilute nitrides, the band structure perturbations due to the hydrostatic pressure lead to substantial modification of the optical gain owing to the changes in the electron and hole excited states as well as the interband and intraband transitions. [8] Pressure-dependent Photo-Reflectance (PR) measurements done on a series of InGaAsN/GaAs multiple QWs indicate that there is a significant increase in the CBO and electron effective mass for higher values of hydrostatic pressure. [9] It implies that the increase in pressure not only enhances the band gap but also reduces the separation between CB edge and N induced energy level E N. Nevertheless, the nitrogen impurity level is less sensitive to the variation in hydrostatic pressure in comparison to InGaAs CB edge, which is responsible for the origin of the non-linear dependence of energy band gap with hydrostatic pressure.…”

Section: Introductionmentioning

confidence: 99%

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Mal

Jayarubi²,

Das³

et al. 2018

Physica Status Solidi (b)

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The hydrostatic pressure induced band diagram of an InGaAsN/GaAs spherical quantum dot (QD) system is theoretically calculated using an expanded form of standard 8 band k · p Hamiltonian. The band parameters including energy gap, band offsets, and effective masses of electron and hole as a function of hydrostatic pressure are extracted using 10 band k · p model to calculate optical gain, threshold current density, and confined exciton binding energies of the QD system for the possible potential applications in 1.3–1.55 μm laser diodes. The optical gain increases with the increase in hydrostatic pressure up to 30 kbar and eventually decreases for further application of higher pressures. This effect is not usually observed in InGaAsN/GaAs quantum wells owing to the strong dependence of hole and electron effective masses with the hydrostatic pressure. A relative blue shift is observed in the gain spectra due to the increase in hydrostatic pressure or carrier concentration whereas a redshift is observed due to the increase in geometrical dimensions or impurity concentration which helps in estimating the range of operation of InGaAsN/GaAs QD based devices. The obtained binding energies, threshold current densities, and strain within the QDs help in understanding the influence of pressure and dot radius on these parameters.

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“…Ahmed et al studied, theoretically, the optical gain of InAs .98 N .02 /GaSb quantum well laser where they show that the hydrostatic pressure reduces the optical gain in addition to shortening its wavelength to 1.16 μm . 11 Eye, skin, and other biological tissues imaging is possible with optical coherence tomography (OCT). Additionally, this is also possible for the dermal layer providing sub‐cellular axial resolution with an increasingly lateral resolution by using short wavelengths (≤400 nm) where it gives additional image diagnostic 12 .…”

Section: Introductionmentioning

confidence: 99%

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

Al-Shatravi

Abdullah

Al-Khursan

2020

Micro & Optical Tech Letters

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GaN/Al0.5Ga0.5N and InN/Al0.5Ga0.5N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then connected with the rate equations model to obtain a dB gain, output power, and shot noise in these SOAs. GaN peaked at 351 nm which is preferred in optical coherence tomography applications. InN is peaked at 1028 nm which can be used in gas detection and environmental pollution monitoring. Both structures studied have high gain and low noise and nearly equivalent TE and TM gain which makes them adequate for the use in both these two modes. These calculations show the importance of InN and GaN QD nanostructure in the applications.

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Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence

Cited by 4 publications

References 38 publications

Molecular Dynamics Simulation Study of Eucommiaulmoides GUM/AG Nanoparticle Composites

Molecular Dynamics Simulation Study of Eucommiaulmoides GUM/AG Nanoparticle Composites

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

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