Optical gain medium incorporation into semiconductor optomechanical cavities

Integrated optomechanics

“…We show some of the main results in optomechanics theory, necessary to keep track of the first part of the thesis. We invite the reader interested in detailed derivations to look at the several appendices of the thesis, where I bring most of them, or to some other valuable sources of optomechanical theoretical derivations [43,44,45,46].…”

“…Since the wave is composed only by radial movement, we can compute the velocity of the mechanical wave V using the radial-radial component of the strain-stress constitutive relation (see chapter 1), and the expression for longitudinal waves as V = c 11 /ρ, with c 11 = 118.8 GPa and ρ = 5317kg/m 3 for GaAs [44,51]. The obtained frequency in this case, for a 5 µm radius disk, is Ω mec /2π = 236 MHz, considerably close to the value obtained with the numerical methods of the next section.…”

“…Hydrogen silsesquioxane (HSQ) is a negative-tone resist, that undergoes an interesting cross-linking modification of its polymer chains, becoming a glass-like structure after the development. It is widely used for silicon, and it was also used for some GaAs etching [44]. However, HSQ needs a high dose (∼ 3× higher than PMMA, a common electro-resist), resulting in long writing times and more fluctuations in the mask, due to equipment/temperature drifts, for example.…”