Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain

Singh, A.K.; Rathi, Amit; Riyaj, Md.; Bhardwaj, Garima; Alvi, P. A.

doi:10.1016/j.spmi.2017.07.014

Cited by 19 publications

(4 citation statements)

References 28 publications

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“…In night vision field, ternary and quaternary III-V alloy semiconductors such as the photoemissive layer can prolong the long-wave threshold of the negative electron affinity (NEA) GaAs photocathodes by adjusting the bandgap, and can work at 1.06 μm wavelength or longer wavelengths [ 1 , 2 , 3 , 4 , 5 ]. At 1.06 μm, Fisher et al obtained an InGaAs photocathode with 3% quantum efficiency in the laboratory by optimizing the experimental conditions, while Escher et al obtained an InGaAsP photocathode with quantum efficiency up to 9% [ 6 , 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Properties of In0.87Ga0.13As0.25P0.75(001)β2(2×4) Surface: A First-Principles Study

Wang

Zhang

et al. 2023

Materials

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InGaAsP photocathode surface affects the absorption, transport and escape of photons, and has a great influence on quantum efficiency. In order to study InGaAsP photocathode surface, the electronic structure, work function, formation energy, Mulliken population and optical properties of In0.87Ga0.13As0.25P0.75(001)β2(2×4) reconstruction surface were calculated from first principles. Results show that stabilized the In0.87Ga0.13As0.25P0.75(001)β2(2×4) surface is conducive to the escape of low-energy photoelectrons. The narrow bandgap and emerging energy levels of the reconstruction surface make the electron transition easier. Under the action of the dipole moment, the electrons transfer from inner layers to the surface during the surface formation process. By contrast to the bulk, the surface absorption coefficient and reflectivity considerably decrease, and the high-reflection range becomes narrower as the falling edge redshifts. On the contrary, the surface transmissivity increases, which is conducive for the photons passing through the surface into the bulk to excite more photoelectrons. Meanwhile, the higher absorption coefficient of surface in low-energy side is favorable for long-wave absorption. The dielectric function peaks of the surface move toward the low-energy side and peak values decrease.

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Section: Introductionmentioning

confidence: 99%

Optoelectronic Properties of In0.87Ga0.13As0.25P0.75(001)β2(2×4) Surface: A First-Principles Study

Wang

Zhang

et al. 2023

Materials

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“…The energy range between a material's valence and conduction bands, or bandgap, controls both its electrical and optical characteristics. Engineers and scientists may tailor the behavior of materials to meet certain requirements by adjusting the bandgap [4][5][6][7] . Bandgap engineering, for instance, enables the development of transistors with changing energy gaps in the field of semiconductor electronics, simplifying the construction of devices that can function well at various Journal of Mines, Metals and Fuels, 71 (10): 1394-1400; 2023.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependant Bandgap Tuning of GaAs, AlAs, InAs, and InP Binaries Grown on different Substrates

Kumar,

Kattayat,

Kumar

et al. 2023

jmmf

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This article carries out the temperature-dependent study of the band structures of bulk binaries such as AlAs, GaAs, InAs, and InP grown on different substrates thus showing the combined effect of substrate and temperature on the bandgaps of the binary systems under study. For the calculations of the band structures of the binary systems grown on different substrates, the k.p technique has been used. The results have been analyzed successfully. For all the binaries, it has been found that the bandgap is reduced with increasing temperature but the rate of reduction with temperature is different for dissimilar substrates. The outcomes of the calculations for the band structures of binaries grown on lattice-matched and unmatched substrates are very useful for understanding of device performance.

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“…The researchers of the field of optoelectronics are paying attention on quantum well (QW) heterostructres as these structures have potential utilization in the field of infrared detectors, MIR spectroscopy, gas leakage sensing, optical data transferring, MIR emitters and monitoring of pollution [Ohno et al, 1992;Duggan and Ralph, 1987;Nirmal et al, 2015;Yadav et al, 2017;Alvi, 2017;Singh et al, 2017;Dolia et al, 2017]. These QW have a very remarkable role in tunable semiconductor lasers which have yield of 3-5μm.…”

Section: Introductionmentioning

confidence: 99%

Study of Nano-Hetrostructure of Type-Ii Compound Semiconductors:Their Electronic and Hole Wave Function Action in Mid Infrared Region

Haider,

Sharma,

Alvi

et al. 2023

IJAP

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A nano-hetrostructure of W shaped type-II compound semiconductor which have combination of layers made by AlSb, InAs and GaAsSb is studied for utilization in Lasing action of Mid Infrared Region (MIR). For this heterostructure, a multiband band k.p Hamiltonian has been simplified to compute the required carrier's wave functions, their subband structures and matrix dipole elements accountable for the probabilistic transitions which results into the high optical gain. For 2-D charge carrier density of 1.5 × 1012 cm − 2 , the computed results confirm that only the light hole (LH) subbands take part in optical transition in order to produce the high optical gain of the order of ~8850 /cm which corresponds to ~5.2 µm. Keeping in view its high optical gain at ~5.2 µm, the proposed type-II AlSb/InAs/GaAsSb heterostructure can be of use in the environmental monitoring, particularly important for sensing the CO2, CO and NO lethal gases available in the contaminated environment.

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Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain

Cited by 19 publications

References 28 publications

Optoelectronic Properties of In0.87Ga0.13As0.25P0.75(001)β2(2×4) Surface: A First-Principles Study

Optoelectronic Properties of In0.87Ga0.13As0.25P0.75(001)β2(2×4) Surface: A First-Principles Study

Temperature Dependant Bandgap Tuning of GaAs, AlAs, InAs, and InP Binaries Grown on different Substrates

Study of Nano-Hetrostructure of Type-Ii Compound Semiconductors:Their Electronic and Hole Wave Function Action in Mid Infrared Region

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