2022
DOI: 10.1039/d2tc00246a
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Optical gaps and excitons in semiconducting transition metal carbides (MXenes)

Abstract: We use time-dependent density functional theory together with the HSE06 hybrid functional to investigate the optical and excitonic properties of two-dimensional transition metal carbides, MXenes. We determine reliable optical gaps,...

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Cited by 24 publications
(36 citation statements)
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“…Carbide MXenes show high conductivity, high oxidation resistance, and easily tunable surface terminations, , which make them potential candidates for energy storage applications, supercapacitors, sensors, carbon capture technologies, , and heterogeneous catalysts. Studies on MXenes suggest that most titanium-based MXenes without surface functionalization show metallic behavior, , and the electronic properties could be modulated by surface terminations. However, Ti 2 CO 2 shows semiconductor characteristics with an indirect band gap. …”
Section: Introductionmentioning
confidence: 99%
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“…Carbide MXenes show high conductivity, high oxidation resistance, and easily tunable surface terminations, , which make them potential candidates for energy storage applications, supercapacitors, sensors, carbon capture technologies, , and heterogeneous catalysts. Studies on MXenes suggest that most titanium-based MXenes without surface functionalization show metallic behavior, , and the electronic properties could be modulated by surface terminations. However, Ti 2 CO 2 shows semiconductor characteristics with an indirect band gap. …”
Section: Introductionmentioning
confidence: 99%
“…Ti 2 C was shown to be a typical semiconductor system with an electronic band gap of about 0.2 eV . The A-AFM configuration was favored over FM, C-AFM, and G-AFM in a Ti 2 C system, where A-AFM means a ferromagnetic alignment between intralayer Tis and antiferromagnetic ordering among the top and bottom layers, while in the C-type (G-type) structure, spins are arranged antiferromagnetically within each Ti layer and ferromagnetically (antiferromagnetically) ordered between lines of the top and bottom layers. , Recently, Ketolainen et al showed that the ground state of Ti 2 C is an AFM semiconductor; the electronic band gap was calculated to be 0.18 and 0.32 eV using the Perdew–Burke–Ernzerhof (PBE) and the Heyd–Scuseria–Ernzerhof (HSE06) hybrid functional, respectively. However, the magnetic ground states can also have FM alignment.…”
Section: Introductionmentioning
confidence: 99%
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