Optical hyperdoping

Yang, Wenjie; Lim, Shao Qi; Williams, J. S.

doi:10.1016/b978-0-12-820255-5.00001-5

Laser Annealing Processes in Semiconductor Technology 2021

DOI: 10.1016/b978-0-12-820255-5.00001-5

|View full text |Cite

Optical hyperdoping

Wenjie Yang¹,

Shao Qi Lim²,

J. S. Williams³

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 96 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Silicon hyperdoping using selenium and manganese ion implantation and pulsed laser annealing

Wang,

Komarov,

Parkhomenko

et al. 2024

Dokl. Akad. nauk

View full text Add to dashboard Cite

The effect of pulsed laser annealing (PLA) on the structure and optical properties of Mn-, Seand (Mn+Se)implanted silicon layers was studied. 95 keV Mn+ and 200 keV Se+ ions were implanted separately and together into p-type Si wafers up to the fluence 1 · 1016 cm–2 at room temperature. Then, the samples were irradiated in the ambient air with a single 2 J/cm2 ruby laser pulse. The detailed redistribution of Mn and Se atoms in the implanted layers during PLA was examined using Rutherford backscattering spectroscopy in random and channeling configuration. It was found that a notable percentage of implanted manganese atoms diffuses to the silicon surface, while the Se concentration depth profile broadens in both directions after PLA. Mn co-implantation enhances the Se diffusion to the surface, which leads to a Se decrease in crystalline silicon, but it does improve the crystal structure of the implanted silicon layer due to the increase of diffusion velocity. In contrast to the Mn-implanted sample, Se-implanted and (Mn+Se)-co-implanted samples after PLA exhibit strong optical absorption in the infrared range. The observed band at 0.6 eV is associated with electronic transitions from the intermediate band to the lowest energy levels of the conduction band.

show abstract

Silicon hyperdoping using selenium and manganese ion implantation and pulsed laser annealing

Wang,

Komarov,

Parkhomenko

et al. 2024

Dokl. Akad. nauk

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Optical hyperdoping

Cited by 1 publication

References 96 publications

Silicon hyperdoping using selenium and manganese ion implantation and pulsed laser annealing

Silicon hyperdoping using selenium and manganese ion implantation and pulsed laser annealing

Contact Info

Product

Resources

About