Optical in-well pumping of a semiconductor disk laser with high optical efficiency

Beyertt, S.-S.; Zorn, M.; Kubler, T.; Wenzel, H.; Weyers, M.; Giesen, Adolf; Tränkle, G.; Brauch, U.

doi:10.1109/jqe.2005.858794

Cited by 55 publications

(38 citation statements)

References 15 publications

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“…This aspect has recently been explored further in the context of the in-well pumping of a 980 nm laser with a 940 nm pump. 13 Furthermore, in barrier pumping, the absorption length of the barrier turns the number of QWs into a critical design parameter. Too few wells will result in a significant fraction of the expensive 700 nm pump light being transmitted through to and absorbed in the Bragg stack and substrate below the gain region.…”

Section: Introductionmentioning

confidence: 99%

Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser

Zhang¹,

Ackemann²,

McGinily

et al. 2006

Appl. Opt.

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This version is available at https://strathprints.strath.ac.uk/30961/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laserWei Zhang, Thorsten Ackemann, Stephen McGinily, Marc Schmid, Erling Riis, and Allister I. FergusonWe report the operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser. The laser delivers1Wa t8 5 5n ma n di spumped with a cost-effective fiber-coupled laser diode emitting at 806 nm. The laser modal gain is examined and ways of optimizing the system are investigated and discussed.

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Section: Introductionmentioning

confidence: 99%

Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser

Zhang¹,

Ackemann²,

McGinily

et al. 2006

Appl. Opt.

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“…This enables homogenous pumping up to very large diameters of hundreds of microns and pumping of large active stacks with tens of active layers to maximize optical gain [Bey05,Kim06,Bey07]. These active layers within the gain-chip are usually positioned as resonant periodic gain structure (RPG) to maximize the overlap with the optical field intensity.…”

Section: High-power Vertical External-cavity Surface-emitting Lasersmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…This method relies on the availability of high-power pump lasers with longer emission wavelengths (940-980 nm) and exploits the in-well pumping scheme. In this case, to ensure sufficient pump absorption, the semiconductor structure is modified to embed a higher number of QWs, a pump retroreflecting mirror and the sub-cavity is tailored to present an additional resonance at the pump wavelength [44,79]. The QWs can also be positioned at or close to both pump and signal resonances [80].…”

Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Optical in-well pumping of a semiconductor disk laser with high optical efficiency

Cited by 55 publications

References 15 publications

Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser

Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser

Design and Realization of Novel GaAs Based Laser Concepts

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

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