Optical investigation of an AlGaN/GaN interface with the presence of a two-dimensional electron gas

Lin, Der-Yuh; Wu, Jia‐Ren; Hung, Chih-Chien; Lu, Chunhui; Huang, Y. S.; Liang, Chi‐Te; Chen, N. C.

doi:10.1016/j.physe.2010.06.029

Cited by 5 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to detect the built-in electric field in the solar cells, ER spectra were performed at various reversed biases [5,6]. The modulation voltage is 0.3 V and the system configuration is similar to the reflectivity measurement and the detailed experimental setup has been described elsewhere [10,11]. Furthermore, a solar simulator (SS150 fully reflective solar simulator) was used to obtain the -characteristics.…”

Section: Experimental Methodsmentioning

confidence: 99%

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Lin

et al. 2015

International Journal of Photoenergy

View full text Add to dashboard Cite

The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm.I-Vmeasurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

show abstract

Section: Experimental Methodsmentioning

confidence: 99%

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Lin

et al. 2015

International Journal of Photoenergy

View full text Add to dashboard Cite

show abstract

“…To improve solar cell efficiency, it is necessary to determine the suitable i-layer thickness, to develop a convenient method of measuring the built-in electric field, and to understand the built-in electric field effect on the separation of photogenerated carriers. [4][5][6] GaInP is a III-V ternary compound material, which has a direct band gap of approximately 1.9 eV. It also has a high absorption coefficient and good antiradiation capability, which is notable for thin-film optoelectronic devices such as LED and solar cells.…”

Section: Introductionmentioning

confidence: 99%

Optical characterization of GaInP p–i–n solar cells

Li¹,

Lin²,

Ko³

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Four p–i–n GaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD) with different intrinsic layer thicknesses from 0.25 to 1 µm. A series of optical measurements, including electroreflectance (ER), photoluminescence (PL), electric luminescence (EL), and photocurrent (PC) measurements, have been performed to study the built-in electric field effect and to determine the suitable thickness of an intrinsic layer. The PL and EL spectra reflected the crystal quality of the GaInP layers. Furthermore, from the obtained ER spectrum, the built-in electric field in the intrinsic layer can be revealed. From the PC spectra under various bias voltages, the effect of built-in electric fields on the collection of photogenerated carriers has been studied.

show abstract

Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate

Zhang

Bao

et al. 2011

Applied Surface Science

View full text Add to dashboard Cite

Optical investigation of an AlGaN/GaN interface with the presence of a two-dimensional electron gas

Cited by 5 publications

References 9 publications

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Optical characterization of GaInP p–i–n solar cells

Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate

Contact Info

Product

Resources

About