Optical investigation of In0.21Ga0.79As multiple quantum wells grown on (001) and (113) A GaAs substrates

Fraj, Ibtissem; Saidi, F.; Zaâboub, Z.; Bouzaı̈ene, L.; Sfaxi, L.; Maâref, H.

doi:10.1016/j.spmi.2015.02.034

Cited by 10 publications

(2 citation statements)

References 28 publications

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“…Low dimensional III-V semiconductor materials such as quantum well, quantum wire and quantum dot (QD) are attractive to researchers due to their excellent electronic and optical properties [1][2][3][4]. The electrons of quantum dot are confined in three dimensions and the electron energy levels are discrete which is similar with that of an atom.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

et al. 2019

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Stress and strain distributions in and around a single or two-coupled pyramidal InAs quantum dots (QDs) embedded in GaAs are calculated by finite element methods according to the continuum elasticity theory. By changing the quantum dot spacing and thickness of cap layer, the results about strain and stress distributions show compressive strain and stress distribution in the QDs and relaxation undergoes two stages with different speeds for different quantum dot height, quantum width and thickness of cap layer. The stress and strain distributions of pyramidal QDs would not vary monotonously with geometric dimensions. The height of quantum dot and cap layer thickness can effectively adjust the vertical correlation of self-assembly QDs according to the calculation. The shape of stress distribution at surface of cap layer can be tuned from a quadrangle into a circle by increasing the thickness of cap layer or decreasing the height of quantum dot. Also, a new approach to grow quantum ring is found in this paper. The calculations of two-coupled QDs show that the self-assembly technology might fail if the horizontal distance between two QDs is not large enough. The stress induced by upper QDs will be relaxed to zero with a longer distance downwards is found in this paper.

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Section: Introductionmentioning

confidence: 99%

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

et al. 2019

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“…By increasing temperature further, the overall emission intensity gradually decreases. It indicates that the non-radiative recombination starts to dominate over the radiative recombination process [37].This should correspond to the thermal activated non-radiative recombination mechanism.…”

Section: Resultsmentioning

confidence: 90%

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

Naceur

Choubani

Smiri

et al. 2020

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Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates

et al. 2019

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Optical investigation of In0.21Ga0.79As multiple quantum wells grown on (001) and (113) A GaAs substrates

Cited by 10 publications

References 28 publications

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates

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