Optical Investigation of Phonons and Plasmons

Burstein, E.

doi:10.1007/978-1-4899-5532-6_13

Cited by 6 publications

(1 citation statement)

References 57 publications

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“…Tunnelling spectroscopy is a powerful tool for investigating the energy band structures of conductive materials near the Fermi level, because the first-derivative curve of the tunnelling current across the tunnel junction is basically proportional to the density of states (DOS) [25][26][27][28][29][30][31][32][33][34][35]. Recently, we have synthesized layered nanocomposites of 1T-TaS 2 [13][14][15], 2H-TaS 2 [15,16] and 4Hb-TaS 2 [17] by using the exfoliation-adsorption technique.…”

Section: Introductionmentioning

confidence: 99%

A tunnelling study on polymer/1T-Li_xTaS₂layered nanocomposites

Enomoto¹,

Takai²,

Ozaki³

et al. 2004

J. Phys.: Condens. Matter

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Electronic structures near the Fermi level of polymer/1T-LixTaS2 layered nanocomposites have been studied by tunnelling spectroscopy. Polymer/1T-LixTaS2 layered nanocomposites were synthesized by using the exfoliation–adsorption technique. Single crystals of 1T-TaS2 were used as host materials. Poly(ethylene oxide) (PEO) and poly(ethylenimine) (PEI) with different molecular weights were adopted as guest intercalants. Powder x-ray diffraction patterns showed that all samples of the polymer/1T-LixTaS2 layered nanocomposites contain organic polymer between all individual 1T-TaS2 sheets. Although 1T-TaS2 single crystal is well known to show quite unique temperature dependences of the resistivity due to the charge density wave (CDW), the resistivities of all polymer/1T-LixTaS2 nanocomposites showed semiconductor-like temperature dependences. The tunnelling spectra of polymer/1T-LixTaS2 nanocomposites revealed that the CDW gap disappears in the density of states near the Fermi level of polymer/1T-LixTaS2 nanocomposites and their electronic structures show a metallic behaviour.

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Section: Introductionmentioning

confidence: 99%

A tunnelling study on polymer/1T-Li_xTaS₂layered nanocomposites

Enomoto¹,

Takai²,

Ozaki³

et al. 2004

J. Phys.: Condens. Matter

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Resonant Raman Scattering in Zn_xHg_1–xSe

Kumazaki

1989

Physica Status Solidi (b)

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Dielectric Constant in Zn_xHg_1–xSe Determined by Raman Scattering

Kumazaki

1990

Physica Status Solidi (b)

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D i e l e c t r i c C o n s t a n t in Z n x H g l -x S e D e t e r m i n e d by R a m a n Scattering K. KUMAZAKI BYZnxHgl-xSe(ZnHgSe) is a narrow-gap semiconductor (NGS), it is a mixture of a semimetal HgSe and a wide-gap semiconductor ZnSe. The value of the fundamental energy gap of this material, with the zincblende structure in the whole range of composition x, varies with x continuously from -0.02 to 2.7 eV. Recently, TO

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Optical Investigation of Phonons and Plasmons

Cited by 6 publications

References 57 publications

A tunnelling study on polymer/1T-Li_xTaS₂layered nanocomposites

A tunnelling study on polymer/1T-Li_xTaS₂layered nanocomposites

Resonant Raman Scattering in Zn_xHg_1–xSe

Dielectric Constant in Zn_xHg_1–xSe Determined by Raman Scattering

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Optical Investigation of Phonons and Plasmons

Cited by 6 publications

References 57 publications

A tunnelling study on polymer/1T-LixTaS2layered nanocomposites

A tunnelling study on polymer/1T-LixTaS2layered nanocomposites

Resonant Raman Scattering in ZnxHg1–xSe

Dielectric Constant in ZnxHg1–xSe Determined by Raman Scattering

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Product

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A tunnelling study on polymer/1T-Li_xTaS₂layered nanocomposites

A tunnelling study on polymer/1T-Li_xTaS₂layered nanocomposites

Resonant Raman Scattering in Zn_xHg_1–xSe

Dielectric Constant in Zn_xHg_1–xSe Determined by Raman Scattering