Optical investigation of the Si−SiO2 system

Hoffmann, G.; Németh-Sallay, M.; Schanda, J.

doi:10.1007/bf03158127

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…3 briefly summarized in Table II. The four major bands observed in bulk SiO2 glass and thermally grown films on Si were observed in the SiOxN~ films as well (8,(12)(13)(14)(15)(16)(17). The broad shoulder on the high energy side of the major 1080 cm -1 band at about 1160 cm -1 was not as pronounced in the spectra of films on InSb because of the onset of the fundamental absorption edge (Fig.…”

Section: Augermentioning

confidence: 91%

Composition, Chemical Bonding, and Contamination of Low Temperature SiO x N y Insulating Films

Anderson

Schmidt

Comas

1978

J. Electrochem. Soc.

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The stoichiometry and contamination of low temperature SiOxN~ layers grown by the pyrolytic decomposition of silane in an ammonia-and oxygenrich atmosphere on InSb and Si substrates are reported. The chemical composition and chemical bonding properties of the films have been analyzed by Auger, nuclear reaction analysis, optical, Rutherford backscattering, and SIMS techniques. Capacitors were fabricated on Si and InSb substrates, and the electrical characteristics were measured. The layers exhibited physical characteristics similar to those of thermally grown SiO~ layers. Analysis of the SiOxN~ films indicated a uniform distribution of Si and O throughout the films. The N concentration measured in the films ranged from 1 to 3% of the O concentration, depending on the growth parameters. The optical results indicated some evidence of small amounts of Si-N and N-H bonding. All films grown on Si substrates in the presence of InSb or on InSb substrates had In and Sb contamination throughout, with the In and Sb content increasing from the film/substrate interface to the SiOxN~ surface.

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