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Hillmer, Hartmut; Forchel, A.; Hansmann, S.; Morohashi, M.; López, E.; Meier, H. P.; Ploog, K.

doi:10.1103/physrevb.39.10901

Cited by 188 publications

(68 citation statements)

References 42 publications

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“…For the interband hydrostatic deformation potential, values between 7 and 10 eV are reported for GaAs. 28,5,23 The best fit of the theoretical curve with our experimental results is found for Dϭ7.8Ϯ0.5 eV.…”

Section: ͑2͒mentioning

confidence: 60%

“…In order to make a quantitative prediction of the dependence of the acoustic-phonon coefficients on the well width, we use the expression reported by Hillmer et al 5 for the exciton mobility due to acoustic-deformation potential scattering:…”

Section: ͑2͒mentioning

confidence: 99%

“…On the well-width dependence of these coefficients, contradictory results are reported in the literature. [2][3][4][5] In the single subband approximation, an acoustic-phonon coefficient proportional to the inverse of the well width is predicted. 5 Experimentally, a nearly constant value was found by Gammon et al 2 and even a decreasing value when decreasing the well width is reported by Schultheis et al, 3 while Hillmer et al 5 measure exciton mobilities indicating an acoustic-phonon scattering that is decreasing with increasing well width.…”

Section: Introductionmentioning

confidence: 99%

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Well-width dependence of exciton-phonon scattering inInxGa1−xA
Borri
¹
,
Langbein
²
,
Hvam
³

et al. 1999
Phys. Rev. B

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The temperature and density dependencies of the exciton dephasing time in In 0.18 Ga 0.82 As/GaAs single quantum wells with different thicknesses have been measured by degenerate four-wave mixing. The excitonphonon scattering contribution to the dephasing is isolated by extrapolating the dephasing rate to zero-exciton density. From the temperature dependence of this rate we have deduced the linewidth broadening coefficients for acoustic and optical phonons. We find acoustic-phonon coefficients that increase from 1.6 to 3 eV/K when increasing the well width from 1 to 4 nm. This is in quantitative agreement with theoretical predictions when the spatial extension of the exciton wave function, strongly penetrating into the GaAs barrier in thin In x Ga 1Ϫx As quantum wells, is taken into account. The optical-phonon coefficient does not show a systematic dependence on well thickness, and is comparable with the value for bulk GaAs. ͓S0163-1829͑99͒02103-7͔

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Section: ͑2͒mentioning

confidence: 60%

Section: ͑2͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Well-width dependence of exciton-phonon scattering inInxGa1−xA
Borri
¹
,
Langbein
²
,
Hvam
³

et al. 1999
Phys. Rev. B

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“…11 From the temperature dependence of the WL, shown in Fig. 2, an activation energy of 4 meV can be deduced.…”

Section: Figmentioning

confidence: 99%

“…Many studies have shown that increased temperatures ͑up to a certain temperature͒ will cause an increase of the radiative recombination time in twodimensional quantum structures. [9][10][11][12] Feldmann et al 10 explained the temperature dependence of the decay time in terms of momentum conservation for the free excitons. Since a thermal broadening of the free exciton will reduce the k = 0 exciton population, a smaller fraction of the excitons will fulfill the momentum conservation criteria and an increased exciton lifetime is expected.…”

Section: Figmentioning

confidence: 99%

Magnetic field effects on optical and transport properties inInAs∕GaAsquantum dots

et al. 2006

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A photoluminescence study of self-assembled InAs/ GaAs quantum dots under the influence of magnetic fields perpendicular and parallel to the dot layer is presented. At low temperatures, the magnetic field perpendicular to the dot layer alters the in-plane transport properties due to localization of carriers in wetting layer ͑WL͒ potential fluctuations. Decreased transport in the WL results in a reduced capture into the quantum dots and consequently a weakened dot-related emission. The effect of the magnetic field exhibits a considerable dot density dependence, which confirms the correlation to the in-plane transport properties. An interesting effect is observed at temperatures above approximately 100 K, for which magnetic fields, both perpendicular and parallel to the dot layer, induced an increment of the quantum dot photoluminescence. This effect is ascribed to the magnetic confinement of the exciton wave function, which increases the probability for carrier capture and localization in the dot, but affects also the radiative recombination with a reduced radiative lifetime in the dots under magnetic compression.

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Trions and Excitons in CdTe Quantum Wells: Lifetimes, Coherence, Diffusion and Localization

Portella‐Oberli

Ciulin

Haacke

et al. 2002

phys. stat. sol. (b)

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71.35.Cc; 73.21.Fg; 78.47.+p; 78.67.De Dedicated to Professor Dr. Roland Zimmermann on the occasion of his 60th birthday We present the results of a study of the dynamics of trions and excitons in a CdTe modulationdoped quantum well as a function of temperature in the low-density regime. Using three-pulse four-wave mixing technique, we show that, at low temperature, these quasi-particles are inhomogeneously broadened and localized due to disorder effects. At higher temperatures, trions and excitons are mobile and their homogeneous broadening is largely increased as a result of acoustic phonon scattering. Consistently, time-resolved luminescence measurements also reveal a free-particle character for trions at high temperatures. IntroductionAbsorption and luminescence spectra of modulation-doped CdTe quantum wells feature a spectral line situated a few meV below the neutral exciton (X). This line is assigned to negatively (X --) (positively (X þ )) charged excitons. This exciton complex is also called trion. Trions were observed for the first time by Kheng et al. [1] in CdTe-based quantum wells. The properties of trions have been a very active field of research over the last few years for many reasons, one of them being that trions consist of an excitonic resonance, which carries a net Coulomb charge. A number of properties of the trions have been rather well clarified recently, but the ability of the trions to move in the plane of the quantum well is still a matter of very active discussion. It has been argued that trions are formed with localized electrons [2-4] and should therefore themselves be localized. Other reports claim that trions are free to move in the plane of the quantum well [5,6].In this paper, we review the dynamics of trions and excitons in an n-doped CdTe quantum well. This is a topic where the group of Roland Zimmermann has been very active over the last years, and in particular, with Axel Esser [7,8], they have developed

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Optical investigations on the mobility of two-dimensional excitons in GaAs/Ga1−x
Hartmut Hillmer
¹
,
A. Forchel
²
,
S. Hansmann
³

et al.

Cited by 188 publications

References 42 publications

Well-width dependence of exciton-phonon scattering inInxGa1−xA
Borri
¹
,
Langbein
²
,
Hvam
³

et al. 1999
Phys. Rev. B

Well-width dependence of exciton-phonon scattering inInxGa1−xA
Borri
¹
,
Langbein
²
,
Hvam
³

et al. 1999
Phys. Rev. B

Magnetic field effects on optical and transport properties inInAs∕GaAsquantum dots

Trions and Excitons in CdTe Quantum Wells: Lifetimes, Coherence, Diffusion and Localization

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Optical investigations on the mobility of two-dimensional excitons in GaAs/Ga1−xHartmut Hillmer1, A. Forchel2, S. Hansmann3 et al.

Cited by 188 publications

References 42 publications

Well-width dependence of exciton-phonon scattering inInxGa1−xABorri1, Langbein2, Hvam3 et al. 1999Phys. Rev. B

Well-width dependence of exciton-phonon scattering inInxGa1−xABorri1, Langbein2, Hvam3 et al. 1999Phys. Rev. B

Magnetic field effects on optical and transport properties inInAs∕GaAsquantum dots

Trions and Excitons in CdTe Quantum Wells: Lifetimes, Coherence, Diffusion and Localization

Contact Info

Product

Resources

About

Optical investigations on the mobility of two-dimensional excitons in GaAs/Ga1−x
Hartmut Hillmer
¹
,
A. Forchel
²
,
S. Hansmann
³

et al.

Well-width dependence of exciton-phonon scattering inInxGa1−xA
Borri
¹
,
Langbein
²
,
Hvam
³

et al. 1999
Phys. Rev. B

Well-width dependence of exciton-phonon scattering inInxGa1−xA
Borri
¹
,
Langbein
²
,
Hvam
³

et al. 1999
Phys. Rev. B