Optical lithography—a historical perspective

Ronse, Kurt G.

doi:10.1016/j.crhy.2006.10.007

Cited by 34 publications

(37 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In particular, F 2 -laser-based optical lithography requires glass photomasks with high radiation hardness and optical transmittance at the operation wavelength of 157 nm (7.9 eV) [1]. Pure, stoichiometric, and defect free a-SiO 2 is a key material for this application, mainly for the low thermal expansion coefficient.…”

Section: Introductionmentioning

confidence: 99%

Role of sol-gel networking and fluorine doping in the silica Urbach energy

Lorenzi

Brovelli

Meinardi

et al. 2011

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

We present the results of the analysis of the ultraviolet (UV) absorption edge of fluorine-modified sol-gel silica. UV transmission data, obtained by means of synchrotron radiation, have been analyzed in the spectral range 7.5 − 8.5 eV, with a spectral resolution of about 10 meV. Data on silica samples with different F content (from 0 to few 10 −1 mol %) have been analyzed and compared with literature data on quartz and pure synthetic commercial silica. The analysis allows us to discriminate between the effects of the fluorine addition and those ascribable to structural peculiarities of the sol-gel networking. The estimated Urbach energy E U (T = 0) ranges between 45 and 55 meV, higher that in crystalline quartz and lower than in commercial synthetic silica. The study of the temperature dependence of E U (T ) shows that the fluorine modification of the silica network causes the lowering of the static disorder and the widening of the energy gap. However, there is also a relevant effect of the production process, since sol-gel silica samples show lower E U values with respect to other types of silica, quite independently of the fluorine content. The analysis of the Raman spectra however shows that the starting amount of fluorine-modified molecular precursor influences the network condensation process, independently of the final fluorine content into the matrix.

show abstract

Section: Introductionmentioning

confidence: 99%

Role of sol-gel networking and fluorine doping in the silica Urbach energy

Lorenzi

Brovelli

Meinardi

et al. 2011

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

show abstract

“…The equipment it requires is much less expensive (by a factor of [10][11][12][13][14][15][16][17][18][19][20] and more widely available than the e-beam or FIB writers often used to make nanostructures. Nanoskiving introduces "cutting" as a step that replicates patterns and generates nanoscale features; it is analogous to "printing" and "molding" in soft lithography, and to "exposure" in photolithography.…”

Section: Discussionmentioning

confidence: 99%

“…[11,12] This trend has become a self-fulfilling prophecy, which has motivated the development of new steppers for projection photolithography, [13] chemistry for photoresists, [14] and other technologies. [5] The state-of-the-art in photolithography produces features with an average half-pitch in memory devices of 32 nm using 193 nm light combined with immersion optics, [15] phase-shifting masks, [16] and multiple exposures. [17] Next-generation lithographic tools, including extreme ultraviolet lithography (EUVL), [18] maskless lithography (ML2, which would use thousands of electron beams to replicate patterns without the need for a physical master), [19] and step-and-flash imprint lithography (SFIL) [20] are expected to drive the average half-pitch down to 16 nm by 2019, according to the International Technical Roadmap for Semiconductors.…”

Section: Nanofabricationmentioning

confidence: 99%

Use of Thin Sectioning (Nanoskiving) to Fabricate Nanostructures for Electronic and Optical Applications

2011

View full text Add to dashboard Cite

Lead-InThis paper reviews nanoskiving-a simple and inexpensive method of nanofabrication, which minimizes requirements for access to cleanrooms and associated facilities, and which make it possible to fabricate nanostructures from materials, and of geometries, to which more familiar methods of nanofabrication are not applicable. Nanoskiving requires three steps: i) deposition of a metallic, semiconducting, ceramic, or polymeric thin film onto an epoxy substrate; ii) embedding this film in epoxy, to form an epoxy block, with the film as an inclusion; and iii) sectioning the epoxy block into slabs with an ultramicrotome. These slabs, which can be 30 nm -10 µm thick, contain nanostructures whose lateral dimensions are equal to the thicknesses of the embedded thin films. Electronic applications of structures produced by this method include nanoelectrodes for electrochemistry, chemoresistive nanowires, and 4 heterostructures of organic semiconductors. Optical applications include surface plasmon resonators, plasmonic waveguides, and frequency-selective surfaces.

show abstract

“…Lithographic printing is done on various semiconducting substrates, usually silicon, and it consists of transferring the pattern of a mask onto a film of resist, and further to the substrate using various types of radiation. Lithographic techniques may be classified depending on the type of radiation used: photolithography, X-ray lithography, ion beam lithography, electron beam lithography, and extreme ultraviolet lithography (EUV) [3][4][5][6][7][8][9]. The most widely employed technology by the microelectronics industry to manufacture computer chips is photolithography or optical lithography [1,[3][4][5].…”

mentioning

confidence: 99%

“…Lithographic techniques may be classified depending on the type of radiation used: photolithography, X-ray lithography, ion beam lithography, electron beam lithography, and extreme ultraviolet lithography (EUV) [3][4][5][6][7][8][9]. The most widely employed technology by the microelectronics industry to manufacture computer chips is photolithography or optical lithography [1,[3][4][5]. New lithography techniques are continually developed, the so-called soft lithographic methods being a serious alternative to photolithography: nanoimprint lithography (NIL), dip-pen lithography, step-and-flash imprint lithography (SFIL), screen printing, and so forth.…”

mentioning

confidence: 99%