2015
DOI: 10.1117/12.2087008
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Optical lithography with and without NGL for single-digit nanometer nodes

Abstract: This presentation addresses the challenges to pattern single-digit nanometer nodes. Next generation lithography such as Extreme UV, Multiple E-Beam Direct Write, may or may not help to meet the challenges. Optical lithography may still be needed for all layers, in combination with NGL for relevant layers, or not at all. The consideration will be based on necessary requirements such as overlay accuracy, resolution, and defects. However, even if all these requirements are met, only a satisfactory cost can dictat… Show more

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Cited by 7 publications
(2 citation statements)
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“…Most remarkably, there have been substantial developments to exposure throughput, reliability, variance control and patterning materials for the high resolution required [8,9]. Currently, EUVL is projected to use in manufacturing at the 7-nm node or beyond [10]. ASML, a leading company involved in the development of EUVL tools, revealed that more than 1000 wafers per day had been exposed on its NXE:3300B EUV system over multiple weeks' duration [8].…”
Section: Status and Challengesmentioning
confidence: 99%
“…Most remarkably, there have been substantial developments to exposure throughput, reliability, variance control and patterning materials for the high resolution required [8,9]. Currently, EUVL is projected to use in manufacturing at the 7-nm node or beyond [10]. ASML, a leading company involved in the development of EUVL tools, revealed that more than 1000 wafers per day had been exposed on its NXE:3300B EUV system over multiple weeks' duration [8].…”
Section: Status and Challengesmentioning
confidence: 99%
“…Most remarkably, there have been substantial developments to exposure throughput, reliability, variance control and patterning materials for the high resolution required [6][7]. Currently, EUVL is projected to use in manufacturing at the 7 nm node or beyond [8]. ASML, a leading company involved in the development of EUVL tools, revealed that more than 15,000 wafers had been exposed on its NXE:3300B EUV system in four weeks' duration [9].…”
Section: Extreme Ultraviolet Lithographymentioning
confidence: 99%