Optical loss and noise modelling in microdisk lasers with InGaAs quantum well-dots

Zhukov, A. E.; Moiseev, E. I.; Nadtochiy, A. M.; Fominykh, Nikita; Иванов, К. А.; Makhov, I S; Dragunova, A. S.; Kryzhanovskaya, Natalia V.; Zubov, F. I.; Maximov, M. V.; Mintairov, S. A.; Kalyuzhnyy, N. A.; Shernyakov, Yu. M.; Gordeev, N. Yu.

doi:10.1109/iclo54117.2022.9839952

Cited by 1 publication

(5 citation statements)

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“…The thresholds, shown in Figure , scale with the inverse of R o . This trend has also been observed in III–V microdisk lasers and attributed to carrier recombination at the etched interface or to optical scattering and surface absorption . The relative weight of surface recombination in the overall carrier lifetime scales as the ratio of the circumference to the surface and thus as 1/ R .…”

Section: Measurement Resultsmentioning

confidence: 61%

“…Consequently, the observed trend is attributed to surface induced optical absorption or scattering losses, which also scale with 1/ R in microdisks as a consequence of the mode profile becoming larger with increasing disk radius (insets in Figure ) and the overlap with the outer surface thus reducing . The absorption losses can be indirectly caused by surface recombination depleting free carriers at the outer periphery . While the widening mode profile also increases the overlap with the top electrode, corresponding losses remain negligible with the 1.5 μm w 1 (0.07 cm –1 for R o = 9 μm).…”

Section: Measurement Resultsmentioning

confidence: 96%

“…26 The absorption losses can be indirectly caused by surface recombination depleting free carriers at the outer periphery. 27 While the widening mode profile also increases the overlap with the top electrode, corresponding losses remain negligible with the 1.5 μm w 1 (0.07 cm −1 for R o = 9 μm).…”

Section: ■ Measurement Resultsmentioning

confidence: 99%

“…This trend has also been observed in III−V microdisk lasers and attributed to carrier recombination at the etched interface 32 or to optical scattering and surface absorption. 27 The relative weight of surface recombination in the overall carrier lifetime scales as the ratio of the circumference to the surface and thus as 1/R. 32 However, following the model from Zhukov et al 32 and assuming typical ∼100 ps bulk carrier lifetimes for this gain material, 28 one needs to assume a surface recombination velocity of ∼10 6 cm/s, which appears nonphysical.…”

Section: Acs Photonicsmentioning

confidence: 99%

“…The presence of the bottom electrode does not impact simulated losses, due to the rapid decay of the field in the SiO 2 and air cladding. The outer radius impacts both the scattering and the surface absorption losses at the etched interface. , Finally, the inner radius modifies the current flow and the anisotropy of the in-plane strain relaxation. Importantly, despite of the ring geometry, the cavities behave optically like disks, since the inner surface is too far to influence the optical mode.…”

Section: Materials and Device Designmentioning

confidence: 99%

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Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si

et al. 2022

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SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T 0 . Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.

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Section: Measurement Resultsmentioning

confidence: 61%

Section: Measurement Resultsmentioning

confidence: 96%