Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

Abstract

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Knoops, H. C. M., Loo, van de, B. W. H., Smit, S., Ponomarev, M., Weber, J. W., Sharma, K., ... Creatore, M. (2015). Optical modeling of plasma-deposited ZnO films : electron scattering at different length scales. Journal of Vacuum Science and Technology. A: Vacuum, Surfaces, and Films, 33, 021509-1/13. DOI: 10.1116/1.4905086 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Articles you may be interested in Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk J. Appl. Phys. 117, 045304 (2015) In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means o...

Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

“…The µ opt value of~38 cm 2 V −1 s −1 was much larger than the µ Hall value of~8 cm 2 V −1 s −1 . Knoops et al also studied the µ opt and µ Hall values of the deposited 150-nm-thickness AZO film were approximately 17 and 12 cm 2 V −1 s −1 , respectively [46]. Such inequality has also been reported for boron-doped ZnO film, owing to its microstructure with a poorly conducting grain boundary [28].…”

Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

“…The cause of the increase in mobility and carrier density with film thickness could be related to subtle changes in grain structure, as regularly seen for other materials. 58 , 59 On the other hand, the thicker films are also simply subjected to the deposition temperature (∼350 °C substrate temperature) for longer. Effectively, thicker films are annealed longer in a H 2 S environment than thinner films.…”

Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure

“…By considering that the interaction distance of the incident light with the HfN x films is rather small, it can be expected that only the crystalline quality within 3-4 nm is probed by SE for determining the ρ op (see Table AI and the discussion underneath). Therefore, the difference between the ρ e and ρ op (Δ ρ ) provides insights into the amount of electronic scattering in the HfN x films, as we previously described [13,14,42]. A very low Δ ρ is achieved at the optimum condition for Ar-H 2 plasma.…”