Optical Modulation in Hybrid Waveguide Based on Si-ITO Heterojunction

Rajput, Swati; Kaushik, Vishal; Jain, S. C.; Tiwari, Pragya; Srivastava, Arvind K.; Kumar, Mukesh

doi:10.1109/jlt.2019.2953690

Cited by 37 publications

(9 citation statements)

References 29 publications

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“…Wherein the crystalline phase is more localized in the lms evaporated with ion-assistance. Thus, our deposition technique involves the usage of low energies and higher oxygen concentrations, which distinguishes it from other methods described in recent scienti c papers [25,26]. These conditions favor the formation of a non-crystalline lm, as evidenced by the low carrier concentration (N c < 4•10 18 cm − 3 ).…”

Section: Resultsmentioning

confidence: 99%

“…ITO thin lms with controllable carrier concentration are deposited with high-energy PVD methods such as ion beam deposition [15,16], magnetron sputtering [23,24] and pulsed laser deposition [22] to avoid the following lm annealing, which leads to strong carrier concentration increase. Ion-beam assisted electron beam evaporation deposition (IBAD) without annealing [25,26] is also used, but morphology and extinction coe cient of such thin lms have not been investigated for ultrathin layers. In this work, we propose ion-beam assisted e-beam evaporation followed by annealing which provides a very stable and controlled carrier concentration of ITO lms.…”

Section: Introductionmentioning

confidence: 99%

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Silicon on-chip Electro-optic Modulation With Ito Film Stacks

Lotkov

Baburin

Ryzhikov

et al. 2021

Preprint

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Indium tin oxide (ITO) platform is one of the promising solutions towards state-of-the-art integrated optical modulators for silicon photonics applications. We demonstrate the way to obtain both high extinction ratio and low insertion loss electro-optic modulation with ITO-based film stack. By investigating e-beam evaporated 20 nm-thick ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure, a low carrier concentration (from 1·1020 to 2·1020 cm-3) is achieved. The mechanism of oxygen migration in ITO film crystallization is proposed based on morphological features observed under low-energy growth conditions. We compare three electro-optic modulator active elements (current-voltage and optical characteristics) and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550nm under ±16V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-db losses.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon on-chip Electro-optic Modulation With Ito Film Stacks

Lotkov

Baburin

Ryzhikov

et al. 2021

Preprint

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“…For the integration of nanoscale devices on a single chip, the control and confinement of the light beyond the diffraction limit are major challenges that can be overcome by plasmonic [16][17][18][19]. Surface plasmon (SP) excitations in metals allow light to be trapped in the deepsubwavelength zone, which can improve strong light-matter interactions, plasmonic has allowed us to miniaturization of components at a nanoscale level so we can integrate a large number of optical and electronic components on a single chip [23][24]. Controlling and guiding light in on-chip devices via electrical means is a key technology for high-speed computing and embedding data on an optical carrier for efficient data transmission.…”

Section: Introductionmentioning

confidence: 99%

Electrically Tunable Plasmonic Absorber Based On Cu-ITO Subwavelength Grating On SOI At Telecom Wavelength

Pandey

Rajput

Kaushik

et al. 2022

Preprint

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An electrically controlled optical absorption is numerically proposed in a plasmonic waveguide on silicon-oninsulator (SOI) consisting of copper-Indium tin oxide (ITO) based subwavelength grating at 1.55 µm wavelength. The Cu-ITO subwavelength grating in form of a discontinuous Cu layer filled with ITO together with electrically tunable permittivity of ITO provides us with a tunable absorption and efficient guidance of plasmonic mode. An n-type ITO is used which exhibits a significant change in the carrier concentration with the applied voltage resulting in a change in optical absorption at a telecom wavelength of 1.55 µm. We numerically observe maximum tuning in absorption at a grating period of 600 nm and a duty cycle of 50%. The proposed device shows a smaller effective mode area of Am= 0.01421 /µm2 and a plasmonic confinement factor of 34.67%. The device is reported to have an extinction ratio of 10.28 dB for a 100 µm long device at a low voltage of 6V.

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“…TCOs have the ability to adjust carrier density from 10 19 cm -3 to 10 21 cm -3 , exhibiting metallic characteristics from near-infrared to mid-infrared [12], [13]. Candidate TCOs materials such as indium tin oxide (ITO) [14], [15] and aluminum-doped zinc oxide (AZO) [16] have been investigated both numerically and experimentally in modulator application.…”

Section: Introductionmentioning

confidence: 99%

Comparison Study of Multi-Slot Designs in Epsilon-Near-Zero Waveguide-Based Electro-Optical Modulators

Sha

Xie

et al. 2021

IEEE Photonics J.

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We present a systematical comparative research on the modulation performance and the optimization of the multi-slot waveguide modulator at the telecom wavelength of 1.55 μm. It is found that the existence of epsilon-near-zero indium tin oxide slots in modulators can enhance the optical confinement, thus yielding a high extinction ratio (ER) and low insertion loss. Among the designed four types of slot modulators, the single-slot modulator exhibits the widest modulation bandwidth of 78.75 GHz and lowest energy consumption of 1.15 pJ/bit, while the dual-slot one shows the moderate performance. For the more-slot designs, the tri-slot has the advantages of a maximum figure of merit of ~ 106, and the quadri-slot one has the highest ER of 1.38 dB/μm. By integrating the multi-slot modulator on the silicon waveguide, the quadri-slot modulator waveguide exhibits broad optical bandwidth of 83 nm from 1479 to 1560 nm and large modulation depth (~ 18.3 dB). The performance of four types of slot modulators can be further improved from different aspects by the optimization of their geometric parameters. The results of this work could be useful in the design and selection of high performance on-chip modulators for optical communications and ultrafast data processing.

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Optical Modulation in Hybrid Waveguide Based on Si-ITO Heterojunction

Cited by 37 publications

References 29 publications

Silicon on-chip Electro-optic Modulation With Ito Film Stacks

Silicon on-chip Electro-optic Modulation With Ito Film Stacks

Electrically Tunable Plasmonic Absorber Based On Cu-ITO Subwavelength Grating On SOI At Telecom Wavelength

Comparison Study of Multi-Slot Designs in Epsilon-Near-Zero Waveguide-Based Electro-Optical Modulators

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