“…In particular, electrical gating, optical pumping, thermal annealing, and current-induced heating can be employed for this purpose 14 – 19 Thus far, quantum-confined Stark effects in multiple quantum wells, 20 , 21 molecular phase transitions in vanadium dioxide (VO2) or germanium antimony telluride, 22 reorientation of molecules in liquid crystals, 23 ionic transparent, and carrier-induced field effects in semiconductors, i.e., silicon (Si), gallium arsenide, 24 , 25 transparent conducting oxides (TCOs), 26 – 30 indium arsenide (InAs), 31 , 32 and atomically thin transition metal dichalcogenides, 33 , 34 have been leveraged for index modulation. Among these tuning mechanisms, the free-carrier-induced effects in doped semiconductors have yielded great promise for active tuning thanks to higher modulation frequencies (up to several gigahertz), continuous tunability, and lower power consumption compared to techniques based on the Pockels effect or waveguide modulators based on lithium niobate.…”