2021
DOI: 10.1109/jstqe.2021.3055736
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Optical Modulation via Guided-Mode Resonance in an ITO-Loaded Distributed Bragg Reflector Topped With a Two-Dimensional Grating

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Cited by 16 publications
(6 citation statements)
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“…It is worth mentioning that this nearly perfect (99.2%) absorption is due to the appropriately engineered Si metasurfaces satisfying the critical coupling condition at λ = 1310 nm. Moreover, any deviation in the metasurface geometry from the dimensions given in Table 1 , alters the narrow linewidth at 1310 nm 43 . The linewidth of the reflectance in the OFF state indicates the device quality factor Q > 10,000.…”
Section: Resultsmentioning
confidence: 99%
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“…It is worth mentioning that this nearly perfect (99.2%) absorption is due to the appropriately engineered Si metasurfaces satisfying the critical coupling condition at λ = 1310 nm. Moreover, any deviation in the metasurface geometry from the dimensions given in Table 1 , alters the narrow linewidth at 1310 nm 43 . The linewidth of the reflectance in the OFF state indicates the device quality factor Q > 10,000.…”
Section: Resultsmentioning
confidence: 99%
“…In this mechanism, the energy consumption will be about a few fJ/bits, but RC delay is the limiting factor for modulation speed. Energy consumption and modulation speed are both the primary figures of merits 43 . However, all-optical modulators are excellent options for reaching ultrafast modulation 30 .…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In particular, electrical gating, optical pumping, thermal annealing, and current-induced heating can be employed for this purpose 14 19 Thus far, quantum-confined Stark effects in multiple quantum wells, 20 , 21 molecular phase transitions in vanadium dioxide (VO2) or germanium antimony telluride, 22 reorientation of molecules in liquid crystals, 23 ionic transparent, and carrier-induced field effects in semiconductors, i.e., silicon (Si), gallium arsenide, 24 , 25 transparent conducting oxides (TCOs), 26 30 indium arsenide (InAs), 31 , 32 and atomically thin transition metal dichalcogenides, 33 , 34 have been leveraged for index modulation. Among these tuning mechanisms, the free-carrier-induced effects in doped semiconductors have yielded great promise for active tuning thanks to higher modulation frequencies (up to several gigahertz), continuous tunability, and lower power consumption compared to techniques based on the Pockels effect or waveguide modulators based on lithium niobate.…”
Section: Introductionmentioning
confidence: 99%
“…However, such optical modulators suffer from large device footprints and low modulation efficiencies due to the low refractive index change induced by the injected carriers . Hence, it is highly desirable to employ other effective materials such as transparent conductive oxides, liquid crystals, graphene, and phase change materials into the silicon platforms.…”
Section: Introductionmentioning
confidence: 99%