“…Electroabsorption ͑EA͒ has been utilized in the quantum-confined Stark effect ͑QCSE͒ and plays an important role in electroabsorption modulators 6 and optical bistable switches. 1-5 The existence of room temperature ͑RT͒ excitons in multiple quantum well ͑MQW͒ and strained layer superlattice ͑SLS͒ structures increases the potential for practical applications of electromagnetic field effects.…”
The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in zero field from the n=2 heavy-hole state to the n=1 electron state. This reflection change is found to be polarization dependent.
“…Electroabsorption ͑EA͒ has been utilized in the quantum-confined Stark effect ͑QCSE͒ and plays an important role in electroabsorption modulators 6 and optical bistable switches. 1-5 The existence of room temperature ͑RT͒ excitons in multiple quantum well ͑MQW͒ and strained layer superlattice ͑SLS͒ structures increases the potential for practical applications of electromagnetic field effects.…”
The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in zero field from the n=2 heavy-hole state to the n=1 electron state. This reflection change is found to be polarization dependent.
The InGaAlN system is introduced from the viewpoint of light emitting devices in comparison with ZnSe-based materials. The properties and the current status of both materials are reviewed, and future prospects are discussed.
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