Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices

Abstract

We report the first observation of optical nonlinearities due to subband structures in the growth direction of an n-type superlattice by four-wave mixing in an end-firing configuration. We observe a nearly eightfold increase in the third-order optical susceptibility when the electric fields of the CO2 laser are changed from a parallel to a perpendicular orientation to the plane of an Al0.08In0.92Sb/InSb superlattice. No change is observed in a control InSb epilayer under similar conditions.

Molecular-beam epitaxial growth and characterization of AlxIn1−xSb/InSb quantum well structures

“…6 More recent experiments have made use of Al x In 1Ϫx Sb as a barrier material. 7,8 AlSb has a lattice constant which is ϳ5% smaller than that of InSb, but also has a much larger energy gap (⌬E g Ϸ1.41 eV at 300 K͒. Therefore, electrons in InSb quantum wells should be sufficiently confined by Al x In 1Ϫx Sb barriers with small x and consequently small strain.…”

Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences

“…InAlSb layers have been deposited by a magnetron sputter epitaxy system [12][13][14] and a molecular beam epitaxy (MBE) method [15][16][17][18] properties of the deposited InAlSb layer have been studied by Raman scattering, photoluminescence, etc. [19][20][21].…”