Optical nonlinearity in germanium and silicon semiconductor vis-a-vis temperature and wavelengths for sensing application

Mishra, C.S.; Palai, G.

doi:10.1016/j.ijleo.2017.02.092

Cited by 11 publications

(5 citation statements)

References 15 publications

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“…Ultimately, the transmitted intensity for all input signals would be computed with the help of equation (8)(9). The output upshots relating to all selected wavelengths are represented in figure 6.…”

Section: Calculation Of Transmitted Intensitymentioning

confidence: 99%

“…As far as a literature review of the photonic structure is concerned, a good number of research papers are previously published on semiconductor waveguides [4]. Aside this, a few number of articles are found for sensing applications by photonic waveguide structure [5][6][7][8]. For example; reference [5] investigates the sucrose concentration in metamaterial by deploying plane wave expansion technique, while in the reference [6], authors describe the investigation of polymer based optical waveguide pertaining to the temperature.…”

Section: Introductionmentioning

confidence: 99%

“…For example; reference [5] investigates the sucrose concentration in metamaterial by deploying plane wave expansion technique, while in the reference [6], authors describe the investigation of polymer based optical waveguide pertaining to the temperature. Again in the reference [7][8], authors point out various losses in photonic waveguide with respect to the variety of sensing parameters such as porosity, temperature, concentration etc for realising competent photonic integrated circuit. Experimental demonstration of one dimensional strain sensor and its application have been discussed [9].…”

Section: Introductionmentioning

confidence: 99%

“…Polymer based 1 D photonic crystal have been investigated in the reference [10]. Even though reference [6][7][8][9][10] provides the notion on different sensor, reference [11][12][13][14][15][16][17][18] explains the different pressure sensors and their outcomes, which is indicated in the tabular form (Table 1)…”

Section: Introductionmentioning

confidence: 99%

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Realisation of Pressure Sensor using one Dimensional Indium Arsenide (InAs) Based Photonic Waveguide in 3 Communication Windows

Mishra¹,

Nayak

Arunachalam³

et al. 2021

Preprint

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Indium arsenide (InAs) based one dimensional photonic crystal waveguide is cautiously considered in three optical communication windows. Here, the emerging transmitted signal from one dimensional photonic structure is determined with the consideration of five types of losses (diffraction loss, reflection loss, absorption loss, propagation loss, polarisation loss). Further, the transmitted signal is obtained with respect to pressure, which ranges from 0 GPa to 5 GPa for different lattice constant of photonic structure (100 nm, 120 nm, 140 nm). Simulation upshots revealed that indium arsenide semiconductor based photonic waveguide shows an excellent outcome for pressure sensor in the three optical windows as well as different waveguide lengths.

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Section: Calculation Of Transmitted Intensitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Realisation of Pressure Sensor using one Dimensional Indium Arsenide (InAs) Based Photonic Waveguide in 3 Communication Windows

Mishra¹,

Nayak

Arunachalam³

et al. 2021

Preprint

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“…Semiconductors based on group IV elements are the workhorse of the modern electronics industry. Elements like silicon, carbon, and germanium are used for a range of applications in the fields of micro‐electronics, [ 1 ] optics, [ 2 ] photonics, [ 3 , 4 ] and photovoltaics (PV).…”

Section: Introductionmentioning

confidence: 99%

Opto‐Electrical Properties of Group IV Alloys: The Inherent Challenges of Processing Hydrogenated Germanium

et al. 2022

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In this paper the opto-electrical nature of hydrogenated group IV alloys with optical bandgap energies ranging from 1.0 eV up to 2.3 eV are studied. The fundamental physical principles that determine the relation between the bandgap and the structural characteristics such as material density, elemental composition, void fraction and crystalline phase fraction are revealed. Next, the fundamental physical principles that determine the relation between the bandgap and electrical properties such as the dark conductivity, activation energy, and photoresponse are discussed. The unique wide range of IV valence alloys helps to understand the nature of amorphous (a-) and nanocrystalline (nc-) hydrogenated (:H) germanium films with respect to the intrinsicity, chemical stability, and photoresponse. These insights resulted in the discovery of i) a processing window that results in chemically stable Ge:H films with the lowest reported dark conductivity values down to 4.6•10 -4 (𝛀 •cm) -1 for chemical vapor deposited Ge:H films, and ii) O, C and Sn alloying approaches to improve the photoresponse and chemical stability of the a/nc-Ge:H alloys.

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Storing “OPTIK” Data in Cloud: Photonics for Embedded Application

Swain¹,

Nayak²,

Palai³

et al. 2020

Advances in Data Science and Management

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Optical nonlinearity in germanium and silicon semiconductor vis-a-vis temperature and wavelengths for sensing application

Cited by 11 publications

References 15 publications

Realisation of Pressure Sensor using one Dimensional Indium Arsenide (InAs) Based Photonic Waveguide in 3 Communication Windows

Realisation of Pressure Sensor using one Dimensional Indium Arsenide (InAs) Based Photonic Waveguide in 3 Communication Windows

Opto‐Electrical Properties of Group IV Alloys: The Inherent Challenges of Processing Hydrogenated Germanium

Storing “OPTIK” Data in Cloud: Photonics for Embedded Application

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