Optical performance of thin films produced by the pulsed laser deposition of SiAlON and Er targets

Camps, I.; Ramírez, J. M.; Mariscal, Antonio Joaquín Franco; Serna, Rosalía; Garrido, B.; Perálvarez, M.; Carreras, Josep; Barradas, N.P.; Alves, L.C.

doi:10.1016/j.apsusc.2014.12.013

Cited by 6 publications

(5 citation statements)

References 24 publications

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“…After deposition, the films were submitted to an annealing process at 700 °C in air. X-ray photoelectron spectroscopy measurements determined a SiAlON composition of Si (45 at.%), Al (3 at.%), N (40 at.%) and O (12 at.%) [25]. The device structure was completed by fabricating a vertical Metal −Insulator−Semiconductor (MIS) structure, the metal, insulator and semiconductor materials being Al, SiAlON and the Si substrate, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…The introduction into the oxide of additional elements compatible with CMOS technology (e.g. N and Al) has contributed to an optical and mechanical enhancement [25,26]-this is a promising route to enhance the optoelectronic performance of these materials, given their implementation in the electronics industry as a resistive switching element.…”

Section: Introductionmentioning

confidence: 99%

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Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

et al. 2018

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The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole-Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

et al. 2018

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“…The structure has been confirmed by Raman spectroscopy analysis (see Material S1, Supporting Information). The composition of the target has been determined by Rutherford backscattering spectroscopy in our previous work, and it is Si − 34.9 at%, Al − 10 at%, N at% − 43.5 at%, O − 10 %, Ca + Y − 1.7 at%. The films deposition was carried out in a vacuum (1 × 10 −4 Pa) with the substrates held at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…The determined film thickness is 200 ± 5 nm, in a good agreement with the designed value. Finally, the films were annealed at 700 °C during 1 h in air because it has been observed that such treatment in PLD deposited films leads to the reduction defects and to an increase of the rare‐earth ions emission . The as‐grown and thermally treated SiAlON films were found to be amorphous as determined by X‐ray diffraction analysis (see Material S2, Supporting Information).…”

Section: Methodsmentioning

confidence: 99%

“…Oxynitride materials have been object of intensive research due to their excellent mechanical, electronic, and optical properties . They are a very versatile kind of materials because their composition can be varied continuously from oxygen‐rich compositions, close to that of SiO 2 , to a nitrogen‐rich composition, close to that of Si 3 N 4, in order to adjust their optical and electrical performance . The oxynitrides, together with other nitride based materials, can be used as efficient down‐conversion luminescent phosphors.…”

Section: Introductionmentioning

confidence: 99%

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White Cathodoluminescence Emission from Eu‐Doped SiAlON Thin Films

Camps

Mariscal

Calvo‐Barrio

et al. 2018

Physica Status Solidi (a)

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SiAlON materials in thin film configuration are very attractive because their composition can be easily modified from that of silicon dioxide to that of silicon nitride to effectively tune their electrical and optical response, therefore making them suitable for a wide range of optoelectronic devices. In addition, rare‐earth doped SiAlON phosphors in powder configuration are excellent down‐converters to visible light when excited by ultraviolet‐blue photons from light emitting diodes. In this work, the direct excitation by electrons of amorphous nanostructured Eu‐doped SiAlON thin films is explored. XPS analysis shows that the Eu in the films is in its divalent oxidation state (Eu2+), with traces of Eu with a richer oxygen coordination at the film surface. The cathodoluminescence emission from the films is dominated by a wide emission band (FWHM 195 nm) in the visible associated with the Eu2+ 5d to 4f electronic transitions, with a small narrow peak contribution from Eu3+ intra‐4f electronic transitions. Assessment of the CIE color coordinates shows that the spectral emission is close to the pure white. These results show the excellent potential of the Eu‐doped SiAlON films for its implementation in CMOS structures as white light solid state emitters in field emission lamps and displays.

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Silicon oxynitride nanofilms prepared by PLD with controlled Eu-local concentration for broadband white light emitters

Camps

Mariscal-Jiménez

Serna

2023

Applied Surface Science

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Optical performance of thin films produced by the pulsed laser deposition of SiAlON and Er targets

Cited by 6 publications

References 24 publications

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

White Cathodoluminescence Emission from Eu‐Doped SiAlON Thin Films

Silicon oxynitride nanofilms prepared by PLD with controlled Eu-local concentration for broadband white light emitters

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