Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission

Rejeb, S. Ben; Debbichi, M.; Saïd, M.; Gassenq, A.; Tournié, E.; Christol, Philippe

doi:10.1063/1.3503513

Cited by 14 publications

(11 citation statements)

References 30 publications

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“…To date, much of the work on InAs/InAsSb SLs has utilized InAs substrates, while work on InAs/(In)GaSb SLs has primarily been done on GaSb substrates. [139,140]. The primary benefit has been to dramatically increase the wavelength range of roomtemperature operation, which now stands at 3.3 μm.…”

Section: Type-ii Superlattice-based Mid-ir Emitters On Inas and Gasb mentioning

confidence: 99%

“…(a) The layer structure of an InAs/GaSb T2SL laser, where 1 monolayer (ML) of InSb is taken into account in the design, and (b) the pulsed operation (100 ns, 1 kHz) threshold current density (J th ) as a function of temperature for a range of laser devices of different dimensions fabricated from the same epitaxial growth, using the structure shown in (a). (a) Reprinted from[139], with the permission of AIP Publishing.…”

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confidence: 99%

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Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

145

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The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum-and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential midinfrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in midinfrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transitionmetal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim to provide a survey of the current state of the art for mid-IR sources, but instead looks primarily to provide a picture of potential next-generation optical and optoelectronic materials systems for mid-IR light generation.

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Section: Type-ii Superlattice-based Mid-ir Emitters On Inas and Gasb mentioning

confidence: 99%

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confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

145

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“…InAs/GaSb superlattices display interesting optical and electronic properties 1 that are well suited for many device applications, such as infrared detectors 2-4 and lasers. [5][6][7] Matching the effective lattice constant of the superlattice to its substrate, also referred to as strain balancing, is critical and is performed by precise control of interface composition during growth. 8 It is well known that the local strain at interfaces can be significant due to the fact that both cations and anions change across each interface, resulting in interfacial bonds of the type: Ga-As and In-Sb.…”

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confidence: 99%

Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices

Mahalingam

Haugan

Brown

et al. 2013

Applied Physics Letters

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The effect of interface composition control on interfacial strain distribution in InAs/GaSb superlattices on (100)-GaSb substrates is investigated by atomic resolution scanning transmission electron microscopy. The interface composition was controlled by either depositing InSb at each interface or soaking the GaSb-on-InAs interface under Sb2 atmosphere. The strain profiles reveal a distinct difference in the extent to which the superlattice strain is balanced using the two methods. In particular, they indicate that the degree of strain balance achievable with soaking is inherently limited by the arsenic surface coverage during GaSb-on-InAs interface formation, emphasizing the influence of V/III flux ratio at this interface. The results also explain observed X-ray diffraction profiles.

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“…InAs/GaSb type II broken-gap superlattices (T2SL) have been successfully developed for use in long wavelength (LWIR) and midwave (MWIR) infrared detectors 1−5 with band engineered cut-off wavelengths and a reduction in dark current compared to direct gap bulk semiconductors. High-power LWIR and MWIR cascaded LEDs and lasers based on T2SL band structure engineering [6][7][8][9] also offer tunable infrared light emission. Both detectors and lasers perform best at low temperatures, 10 and heat needs to be carried away from the devices to reduce Auger recombination and increase carrier lifetime for detectors, and to decrease lasing threshold for lasers.…”

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confidence: 99%

Thermal Conductivity of InAs/GaSb Type II Superlattice

Zhou

Nguyen

Razeghi

et al. 2012

Journal of Elec Materi

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The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3ω method. Thermal conductivity is reduced by up to 2 orders of magnitude relative to the GaSb bulk substrate. The low thermal conductivity of around 1-8 W/m·K may serve as an advantage for thermoelectric applications at low temperatures, while presenting a challenge for T2SL quantum cascade lasers and high power light emitting diodes. We introduce a power-law approximation to model non-linearities in the thermal conductivity, resulting in increased or decreased peak temperature for negative or positive exponents, respectively.

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Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission

Cited by 14 publications

References 30 publications

Next-generation mid-infrared sources

Next-generation mid-infrared sources

Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices

Thermal Conductivity of InAs/GaSb Type II Superlattice

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