Optical phased array neural probes for beam-steering in brain tissue

Sacher, Wesley D.; Chen, Fu-Der; Moradi-Chameh, Homeira; Liu, Xinyu; Almog, Ilan Felts; Lordello, Thomas; Chang, Michael; Naderian, Azadeh; Fowler, Trevor M.; Segev, Eran; Xue, Tianyuan; Mahallati, Sara; Valiante, Taufik A.; Moreaux, Laurent; Poon, Joyce K. S.; Roukes, M. L.

doi:10.1364/ol.441609

Cited by 37 publications

(31 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our approach is distinct from the photonic-MEMS phase-shifters using Si waveguides 16 , 34 , since we do not require highly doped Si. It also achieves single-lobe output beam steering without wavelength tuning, which has not yet been possible with visible spectrum OPAs 28 , 31 , 40 , The power consumption of the cantilever beam scanners was ~2 orders of magnitude lower than visible-wavelength OPAs, which required ~2 W 31 . Our beam scanners are also distinct from previous MEMS-tunable grating couplers for spectral tuning and fiber-to-chip coupling in the infrared 41 – 45 First, we have achieved a larger 1D scan range (30° in 1D vs. 5.6° in ref.…”

Section: Discussionmentioning

confidence: 99%

Microcantilever-integrated photonic circuits for broadband laser beam scanning

et al. 2023

Self Cite

View full text Add to dashboard Cite

Laser beam scanning is central to many applications, including displays, microscopy, three-dimensional mapping, and quantum information. Reducing the scanners to microchip form factors has spurred the development of very-large-scale photonic integrated circuits of optical phased arrays and focal plane switched arrays. An outstanding challenge remains to simultaneously achieve a compact footprint, broad wavelength operation, and low power consumption. Here, we introduce a laser beam scanner that meets these requirements. Using microcantilevers embedded with silicon nitride nanophotonic circuitry, we demonstrate broadband, one- and two-dimensional steering of light with wavelengths from 410 nm to 700 nm. The microcantilevers have ultracompact ~0.1 mm2 areas, consume ~31 to 46 mW of power, are simple to control, and emit a single light beam. The microcantilevers are monolithically integrated in an active photonic platform on 200-mm silicon wafers. The microcantilever-integrated photonic circuits miniaturize and simplify light projectors to enable versatile, power-efficient, and broadband laser scanner microchips.

show abstract

Section: Discussionmentioning

confidence: 99%

Microcantilever-integrated photonic circuits for broadband laser beam scanning

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…Benefiting from the rapid development of photonic integrated circuits, OPA is a recent research hotspot in several fields, including light detection and ranging (LiDAR) 1,2 , free-space optical communication 3 , laser imaging 4 and biosensors 5 . However, due to the lack of sufficient vertical asymmetry in the design, most current OPA antennas radiate almost identically in the upward and downward directions, which lead to a set of interference fringes in the elemental factor of the antenna 6 .…”

Section: Introductionmentioning

confidence: 99%

Highly directional Si antenna based on dual-layer gratings for optical phased array

Liao²,

Wang

et al. 2023

Nanophotonics, Micro/Nano Optics, and Plasmonics VIII

View full text Add to dashboard Cite

Optical phased array has great potential in the fields of light detection and ranging, free-space optical communication, laser imaging and biosensors due to their excellent characteristics such as all-solid-state structure, fast scanning speed, good stability, high resolution and low cost. According to the radar equation, the transmit power will directly determine the maximum ranging distance of optical phased arrays. Limited by nonlinear effects and damage threshold, it is difficult to further increase the input optical power of Si-based OPA above 30 dB. Therefore, fully utilizing the input optical power of OPA is an important issue in the research. In this paper, we demonstrate a novel three-layer silicon antenna for OPA, which consists of a upside grating layer, a waveguide layer and a downside grating layer from top to bottom. In the simulation, we found that the upward directivity of the antenna is greater than 60% in a large wavelength range of 1413 nm to 1875 nm. In addition, the maximum upward directivity of the antenna is 94.68% at 1599nm. The above result is beneficial to increase the output power of the phased array and eliminate the blind area in the field of view when the beam is scanned to the point of destructive interference. Overall, the above results show that the design proposed in this paper has great potential for application.

show abstract

“…Thus, it is beneficial that laser diodes can be implemented in Silicon photonic integrated circuits (Silicon PICs), for combination of the light beams into one waveguide. This can yield very small and highly integrated light sources for mobile devices and wearables or even more sophisticated future applications like quantum cryptography, basic research or medical applications like photonic brain stimulation [1]. Obviously, for such advanced applications not only the light output characteristics of the laser needs to be tailored to the needs of the application, but also the mechanical features to enable good and cost-efficient mounting of the laser chips to the PICs, preferably even with mass transfer processes [2].…”

Section: Introductionmentioning

confidence: 99%

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

Gerhard

Naehle²,

Jentzsch

et al. 2023

Gallium Nitride Materials and Devices XVIII

View full text Add to dashboard Cite

InGaN lasers in the blue and green wavelength range have opened a wide variety of applications in the past years, which all require unique properties of the employed laser chips. In this paper we will show design and process developments for various InGaN laser designs, each optimized for its specific application.For applications which are very sensitive to energy consumption, like mobile AR/VR devices, we investigated InGaN laser chips with resonator lengths as short as 50 µm. To achieve this, we developed an etched facets technology to overcome the challenges of scribing and breaking for facet generation for such short resonator lengths. The etched facets of these devices are coated on-wafer with a dielectric mirror to achieve the desired reflectivity. Depending on the reflectivity chosen, these devices show ultra-low threshold currents below 3mA and output powers above 50 mW. Combined with a flip-chip design with both contacts on one side, such chips can be integrated into silicon wafer-based beam combiners to generate RBG PIC chips for VR/AR laser projection.For high power applications, we will present data of laser bars. Bars emitting at 430 nm achieved 100 W of continuouswave output power per bar and conversion efficiencies of 50%. Together with bars emitting at 450 nm, that were shown in previous publications, wavelength-multiplexing for materials-processing systems can be realized yielding blue laser light sources with multiple kilowatts of output powers.

show abstract

Optical phased array neural probes for beam-steering in brain tissue

Cited by 37 publications

References 31 publications

Microcantilever-integrated photonic circuits for broadband laser beam scanning

Microcantilever-integrated photonic circuits for broadband laser beam scanning

Highly directional Si antenna based on dual-layer gratings for optical phased array

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

Contact Info

Product

Resources

About