Optical phenomena in GeGaP heterojunctions

Ruyven, L. J. Van; Papenhuijzen, J.M.P.; Verhoeven, A.

doi:10.1016/0038-1101(65)90030-4

Cited by 50 publications

(2 citation statements)

References 9 publications

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“…As a consequence Process I11 was believed to be the more important mechanism controlling the photoresponse behaviour. This involved the excitation of electrons trapped at the interface to energy states above the ZnSe conduction band edge where they then escaped into the ZnSe to produce a detectable photocurrent (Van Ruyven et al 1965). The magnitude of the photoresponse Ip would normally be proportional to the number of filled states NF, their cross-section up for photon capture, and the rate R at which the states are replenished with…”

Section: 1 mentioning

confidence: 99%

The definitive role of the interface in controlling the opto-electronic properties of p-Ge/n-ZnSe heterojunctions

Kirk¹,

Brinkman²

1978

J. Phys. D: Appl. Phys.

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The effect of interfacial conditions upon the opto-electronic properties of p-Ge/n-ZnSe heterojunctions has been studied by engineering the interface of such junctions into two quite distinct and different forms. The first of these has been produced by the evaporation of zinc selenide on to an ordered and oxygen-stabilised (100) germanium surface. The second has been a consequence of the post-growth annealing of junctions formed from the evaporation of zinc selenide on to clean, restructured (100) germanium surfaces; a treatment that has resulted in the development of an interfacial compound phase. The current-voltage and photoresponse characteristics of the junctions have then been determined and models have been proposed that relate to the various conditions existing within the junctions.

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Section: 1 mentioning

confidence: 99%

The definitive role of the interface in controlling the opto-electronic properties of p-Ge/n-ZnSe heterojunctions

Kirk¹,

Brinkman²

1978

J. Phys. D: Appl. Phys.

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“…I n a heterojunction the numerical value of AE, is an important parameter as it is one of the factors determining which transport mechanism dominates in an actual sample over a given voltage range. Among others, Anderson [l] and van Ruyven [2] proposed different energy band diagram models; however, as to their different assumptions made with respect to AE,, neither gave a rigorous theoretical justification. Because of the lack of knowledge of the intimate nature of the heterojunction, a reliable theoretical derivation of the value of AE, from basic principles does not yet seem to be feasible.…”

Section: Introductionmentioning

confidence: 99%

A new method for the determination of ΔEC in heterojunctions

Guizzetti

Reguzzoni

Samoggia

1972

Phys. Stat. Sol. (a)

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A method to establish experimentally the conduction band discontinuity ΔEC in a heterojunction is described. The method is based on the fact that, if a heterojunction is obtained for which the photovoltage is zero, the simple equation ΔEC = (E C 2 – EF) – (E C 1 – EF) can be used to determine the value of ΔEC. As regards PbS–Ge heterojunctions, a value of ΔEC = 0.24 eV is found at 230°K.

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Capacitative dispersion in p–n heterojunctions

Hampshire

1970

Phys. Stat. Sol. (a)

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A theoretical model is given from which the equivalent circuit, is derived for a p-n heterojunction taking into account the relaxation of interface states of both the donor and acceptor type. Experimental data are given describing the behaviour of the incremental capacitance and conductance of n-Si-p-Ge diodes. A value is derived for the conduction band discontinuity of (0.34 0.04) eV decreasing with temperature by (3.6 f 2.0) x x loe4 eV deg-1 over the range 18 to 160 "C. The relaxation effects are described by the presence of 2.5 x 10l2 donor-type interface states per emz having a mean activation energy of 0.075 eV with a relaxation time of 2.6 x lo-@ s. Es wird ein theoretisches Model1 angegeben, aus dem das Aquivalentschaltbild fur einen p-n-Heteroubergang abgeleitet wird, wobei die Relaxation von Zwischenflachenzustiinden vom Donator-und Akzeptortyp beriicksichtigt wird. Experimentelle Werte werden angegeben, die das Verhalten der zusiitzlichen Kapazitanz und Konduktanz von n-Si-p-Ge-Dioden beschreiben. Ein Wert fur die Leitungsbanddiskontinuitat von (0,34 f 0,04) eV, der mit der Temperatur ((3,6 & 2,O) x eV grad-l) im Bereich von 18 bis 160 "C abnimmt, wird abgeleitet. Die Relaxationseffekte werden durch die Anwesenheit von 2,5 X 10l2 Zwischenfllchenzustinden pro cm2 vom Donatortyp mit einer mittleren Aktivierungsenergie von 0,075 eV und einer Relaxationszeit von 2,6 x lo-* s beschrieben.

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Optical phenomena in GeGaP heterojunctions

Cited by 50 publications

References 9 publications

The definitive role of the interface in controlling the opto-electronic properties of p-Ge/n-ZnSe heterojunctions

The definitive role of the interface in controlling the opto-electronic properties of p-Ge/n-ZnSe heterojunctions

A new method for the determination of ΔEC in heterojunctions

Capacitative dispersion in p–n heterojunctions

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