Optical-phonon behavior in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi><mml:mo>:</mml:mo></mml:math>The role of microscopi

Groenen, Jesse; Carles, R.; Landa, Georges; Guerret‐Piécourt, C.; Fontaine, C.; Gendry, M.

doi:10.1103/physrevb.58.10452

Cited by 110 publications

(108 citation statements)

References 52 publications

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“…Similarly, the expected GaAs-like LO-phonon energy of unstrained In 0.15 Ga 0.85 As is 35.9 meV. 36 The compressive strain present in the QD splits the degenerate phonon modes and shifts the energies up by 0.4-0.8 meV, as estimated from the computed strain tensor using the theory and parameters of Refs. 37 and 38.…”

Section: Resultsmentioning

confidence: 99%

Phonon replicas of charged and neutral exciton complexes in single quantum dots

et al. 2010

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The longitudinal-optical ͑LO͒-phonon coupling is experimentally examined by the optical decay of various charged and neutral exciton species in single quantum dots, and the related Huang-Rhys parameters are extracted. A positive trion exhibits significantly weaker LO-phonon replicas in the photoluminescence spectrum than the neutral and negatively charged species. Model computations show that the strength of the replicas is determined by the Coulomb interactions between electrons and holes, which modify the localization of the envelope wave functions and the net charge distribution.

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Section: Resultsmentioning

confidence: 99%

Phonon replicas of charged and neutral exciton complexes in single quantum dots

et al. 2010

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“…On the other hand, it is expected that e T,GaAs * remains basically unchanged for the Ga-As oscillators within the GaAs sublattice of the Ga͑As,N͒ ternary alloy. 19 This is particularly true in the dilute regime. In contrast, the total number of Ga-As oscillators is reduced when N is incorporated substitutionally into GaAs.…”

Section: Gaas-like To-lo Splittingmentioning

confidence: 99%

“…This is the case, for instance, of ͑In,Ga͒As. 19 Accordingly, it cannot be ruled out that the behavior of the GaAs-like LO mode of Ga͑As,N͒ be a consequence of the electrostatic coupling between the GaAs and GaN sublattices of this compound, yielding a downward ͑upward͒ frequency shift of the GaAs-like ͑GaN-like͒ LO mode. To test this hypothesis we used the repulsion model outlined in Ref.…”

Section: Gaas-like To-lo Splittingmentioning

confidence: 99%

“…For undoped GaAs, the ionic plasma frequency associated with the LO phonons, ⍀ GaAs = ͑ LO 2 − TO 2 ͒ 1/2 , is given by 18,19 ⍀ GaAs 2 = 4 Ne T,GaAs…”

Section: Gaas-like To-lo Splittingmentioning

confidence: 99%

“…To test this hypothesis we used the repulsion model outlined in Ref. 19, which allows one to determine the LO frequencies of ternary alloys without any adjustable parameters, in order to estimate the effect of ionic plasmon coupling on the GaAs-like LO branch of GaAs 1−y N y . This model has successfully accounted for the LO phonon behavior 19 and LO-plasmon coupling phenomena 23,24 in ͑In-,Ga͒As ternary alloys.…”

Section: Gaas-like To-lo Splittingmentioning

confidence: 99%

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Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering

Ibáñez

Alarcón-Lladó

Cuscó

et al. 2007

Journal of Applied Physics

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We present a Raman-scattering study on strain-free dilute Ga͑As,N͒ epilayers grown by molecular beam epitaxy. The aim of our work is to discriminate the effect of alloying from the effect of biaxial strain on the frequency behavior of the optical phonon modes of Ga͑As,N͒. In the relaxed epilayers, we observe the following: ͑i͒ for the GaN-like LO mode, an upward frequency shift with increasing N which is larger than previously observed in strained samples; ͑ii͒ for the GaAs-like LO mode, a redshift with increasing N content which is lower than those reported in the literature on strained samples; and ͑iii͒ for the GaAs-like TO mode, we observe a very minor blueshift with increasing N fraction. We discuss the origin of the observed shifts, with particular attention to the reduction of the GaAs-like TO-LO splitting in Ga͑As,N͒. Our data and analysis suggest that such reduction cannot be explained only by a reduction of the total number of Ga-As oscillators due to the substitution of As by N. We discuss the effects of disorder and of ionic plasmon coupling between the GaAs and GaN sublattices of Ga͑As,N͒ on the behavior of the GaAs-like LO mode of the alloy. We conclude that the behavior of this mode is determined by long-range effects.

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Vibrational Evidence for Percolative Behavior in ZnBeSe

Pagès

Ajjoun

Laurenti

et al. 2002

phys. stat. sol. (b)

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We propose a picture based on simple percolative concepts for the basic understanding of vibrational properties in the new attractive class of ternary semiconductor alloys made of materials with highly contrasted bond stiffness. In Zn 1--x Be x Se this accounts for the activation of a strong extra BeSe-like optical mode for x between the percolation thresholds of the Be-Se and Zn-Se bonds. Latter mode is attributed to Be-Se bonds within the quasi-continuous Be-rich hard-like cluster which forms above the percolation threshold.Introduction Atomic substitution in alloys A 1--x B x C brings major topological changes at the percolation thresholds of A-C and B-C bonds. These are the critical compositions associated with the first formation of pseudo-continuous wall-to-wall chains of the corresponding bonds, and were identified at x = x B-C % 0.19 and x = x A-C % 0.81 in zinc-blende systems [1]. In usual alloys these major changes do not go with anomalies for the current physical properties because parent materials are chosen similar in nature. Recently the attention turned towards the new attractive class of ternary alloys made from binaries with highly contrasted mechanical properties, and deviations from this simple picture were predicted [1]. Latter class of alloys opens the way for the observation of percolative effects by vibrational spectroscopies since these techniques address directly the force constant of the bonding, which is extremely sensitive to the mechanical properties of the host matrix.Mixed crystal ZnSe-BeSe is such a contrasted system. Vé rié [2] has predicted a highly covalent bonding for BeSe, corresponding to a small lattice parameter of 5.037 A and a high reduced shear modulus C * s of 0.478. The values for ZnSe are 5.669 A and 0.277 [3]. The longitudinal optical (LO) and transverse optical (TO) phonons of Zn 1--x Be x Se were identified by infrared and Raman analysis [4][5][6][7]. Most of Raman spectra were recorded with the 'LO-allowed/TO-forbidden' geometry. At first sight the alloy shows an MREI (modified random-element isodisplacement)-like [8] twomode behavior. This is observed in similarly mismatched alloys ZnS-ZnTe [9] and InAs-GaAs [10]. However, out of the dilute limits ZnBeSe shows an extra mode between the MREI ones [5,6]. This attracted little attention, probably because it is weak and overdamped. It does not result from structural disorder since high quality is evidenced at any x by X-ray diffraction, nor from symmetry breaking due to lattice distortion [11] since it obeys the selection rules [6]. It is an intrinsic feature since it

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Optical-phonon behavior inGa1−xInxAs:The role of microscopi

Cited by 110 publications

References 52 publications

Phonon replicas of charged and neutral exciton complexes in single quantum dots

Phonon replicas of charged and neutral exciton complexes in single quantum dots

Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering

Vibrational Evidence for Percolative Behavior in ZnBeSe

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