Optical Programming/Electrical Erasing Memory Device Based on Low-Voltage Organic Thin-Film Transistor

Wang, Wei; Ma, Dongge; Gao, Qiang

doi:10.1109/ted.2012.2187296

Cited by 17 publications

(14 citation statements)

References 24 publications

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“…In these works, the operating voltage was reduced by using high-k inorganic films. In addition, Wang et al elucidated that polymeric insulating film can be used as a dielectric layer [105]. They attained a very low operating voltage of around 2 V with an ultrathin pinhole-free poly(methyl methacrylate co glycidyl methacrylate) film.…”

Section: Light-receiving Ofetsmentioning

confidence: 99%

Recent progress in photoactive organic field-effect transistors

Wakayama

Hayakawa

Seo

2014

Science and Technology of Advanced Materials

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Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

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Section: Light-receiving Ofetsmentioning

confidence: 99%

Recent progress in photoactive organic field-effect transistors

Wakayama

Hayakawa

Seo

2014

Science and Technology of Advanced Materials

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“…18 Recently, several groups have demonstrated the integration of the photosensing and memory properties of organic transistor into a single device by maintaining the photo excited charges in the device. This can be done by using ultrathin dielectric, 19 photochromic materials, 20,21 or charge trapping small molecule layer. 22 Zhang et al have demonstrated the light-charge organic transistor memory (LCOM) devices with the low-lying lowest unoccupied molecular orbital (LUMO) energy level small molecule organic semiconductor as the charge storage material.…”

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confidence: 99%

23 bits optical sensor based on nonvolatile organic memory transistor

Ren

Chan

2014

Applied Physics Letters

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Polymer electret transistor memory device has stable charge storage and memory properties. Here, we combine a large band gap organic semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene with the polystyrene electret to form an optical sensor with memory effect. The blue light combined with programming bias leads to a positive threshold voltage shift for more than 100 V while the drain-source current shows a variation of seven orders of magnitude. The dynamic range of current device is up to 23 bits and the photo responsivity is 420 A W−1. The optically programmed transistor can be directly used for high-resolution optical sensor and multi-level data storage applications.

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“…They have been developed with various structures and operating mechanisms 14 such as photoconductors 15 16 , photodiodes 17 18 19 , phototransistors 20 21 22 , and photomemories. Among them, photomemories combine both photosensors and memories, and thus enable simplified circuitry by eliminating the need for independent memory components to store the output of the photosensors 23 24 25 26 27 28 29 . In particular, photomemories based on a transistor structure provide additional advantages, in that they allow for further simplification of pixel-level structure by serving as photosensors, memories, and switching devices all at once.…”

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confidence: 99%

“…In particular, photomemories based on a transistor structure provide additional advantages, in that they allow for further simplification of pixel-level structure by serving as photosensors, memories, and switching devices all at once. For that reason, organic photomemories based on a transistor structure have been proposed with various operating mechanisms, including a photochromic channel semiconductor 23 , a quantum dot embedded channel semiconductor 25 , interface trap 24 26 28 , or an additional layer inserted between a channel semiconductor and a gate dielectric layer 27 . (Hereafter, “organic photomemory (OPM)” refers to the devices based on a transistor structure, unless specified otherwise.)…”

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confidence: 99%

Efficient organic photomemory with photography-ready programming speed

Kim

Seong

Lee

et al. 2016

Sci Rep

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We propose a device architecture for a transistor-type organic photomemory that can be programmed fast enough for use in electrical photography. Following the strategies used in a flash memory where an isolated charge storage node or floating gate is employed, the proposed organic photomemory adopts an isolated photo-absorption zone that is embedded between upper and lower insulator layers without directly interfacing with a semiconductor channel layer. This isolated photo-absorption zone then allows the device to operate in electrically ‘on’ state, in which the high electric-field region can have a maximal spatial overlap with the illuminated area for efficient and facile light-programming. With the proposed approach, a significant threshold voltage shift is attained even with the exposure time as short as 5 ms. High quality dielectric layers prepared by initiated chemical vapor deposition ensure erasing to occur only with electrical signal in a controlled manner. Retention time up to 700 s is demonstrated.

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Optical Programming/Electrical Erasing Memory Device Based on Low-Voltage Organic Thin-Film Transistor

Cited by 17 publications

References 24 publications

Recent progress in photoactive organic field-effect transistors

Recent progress in photoactive organic field-effect transistors

23 bits optical sensor based on nonvolatile organic memory transistor

Efficient organic photomemory with photography-ready programming speed

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