2012
DOI: 10.1016/j.tsf.2011.10.195
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Optical properties and band gap characterization of high dielectric constant oxides

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Cited by 43 publications
(19 citation statements)
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“…All studies involving these materials as thin films concern depositions on metallized-SiO 2 /Si substrates and mainly for a use as high-κ gate dielectric. Fursenko reported a band-gap value (E g ¼4.6 eV) close to ours, for an amorphous film deposited by atomic vapor deposition on TiN/Si(001) substrate [23]. Sr 2 Ta 2 O 7 films have been obtained by Kim [17], Okuwada [18] and Kato [19] by chemical route depositions on Pt-SiO 2 /Si substrates.…”
Section: Discussionsupporting
confidence: 81%
See 1 more Smart Citation
“…All studies involving these materials as thin films concern depositions on metallized-SiO 2 /Si substrates and mainly for a use as high-κ gate dielectric. Fursenko reported a band-gap value (E g ¼4.6 eV) close to ours, for an amorphous film deposited by atomic vapor deposition on TiN/Si(001) substrate [23]. Sr 2 Ta 2 O 7 films have been obtained by Kim [17], Okuwada [18] and Kato [19] by chemical route depositions on Pt-SiO 2 /Si substrates.…”
Section: Discussionsupporting
confidence: 81%
“…The influence of the reactive gas on the structural, morphological and optical characteristics was investigated. Since the targeted composition is not reported in literature, our work is compared to the deposition of related compounds: Sr 2 (Ta,Nb) 2 O 7 deposited by chemical route [17], Sr 2 Ta 2 O 7 elaborated by chemical route [18][19][20] or atomic vapor deposition [21][22][23] and SrTaO 2 N thin films deposited by nitrogen-plasma assisted pulsed laser deposition [24]. In the present study, films were deposited on single crystalline (0 0 1)MgO substrate.…”
Section: Introductionmentioning
confidence: 99%
“…52,53 Literature data are contrasting regarding the type of SrHfO 3 transition: some authors report it to be directly allowed, 54 others that it is an indirectly allowed transition. 55 Hence, in this work, both cases were considered. Raman spectra were measured at room temperature using a micro-Raman spectrometer (Horiba Jobin Vyon) with a 633 nm excitation laser, an edge lter for Rayleigh line rejection, and a CCD detector.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The bandgap value corresponds to the intercept value of this line with the horizontal axis. 37,38 This procedure for the determination of E g is illustrated in the inset of Figure 5b ) ratio for samples which were analyzed by RBS. The figure clearly shows that the film composition can also be estimated by probing the refractive index and/or the bandgap of the deposited film.…”
mentioning
confidence: 99%