Optical properties and bipolar resistive switching of ZnO thin films deposited via DC magnetron sputtering

Terán, Cristian L.; Calderón, Jorge A.; Quiroz, Heiddy P.; Dussán, A.

doi:10.1016/j.cjph.2021.09.009

Cited by 7 publications

(4 citation statements)

References 33 publications

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“…Furthermore, because of its transparency, ZnO is attractive for integrated photonic devices [5] and photocatalysts for wastewater treatment [6,7]. ZnO thin films are prepared using various methods -reactive sputtering [8], spray pyrolysis [9], electrodeposition [10], chemical vapor deposition [11], magnetron sputtering [12], chemical bath deposition [13], sol-gel [14,15], etc. The sol-gel method has emerged as one of the most promising techniques, because it is particularly efficient in producing thin, transparent, homogeneous, multicomponent oxide films of many compositions on various substrates at low cost.…”

Section: Inntroductionmentioning

confidence: 99%

ENHANCED PHOTOCATALYTIC PROPERTIES OF MnOx CO-CATALYTIC MODIFIED ZnO NANOSTRUCTURED FILMS FOR ORGANIC DYE DEGRADATION

Ivanova,

Simeonova,

Kaneva

2024

JCTM

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This work aims to enhance the photocatalytic activity of ZnO films for persistent organic pollutants. The photocatalysis method has gained significant interest as a sustainable and environmentally friendly approach to enhance the safety of clean water by eliminating persistent organic pollutants. Zinc oxide as a transition metal oxide is recognized as a highly effective material for photocatalysis. Even so, ZnO can be modified to increase its action and result in a more significant degradation of organic pollutants. In the photocatalytic process, an electron from the valence band is excited and moves to a higher energy level, the conduction band. Thus, an electron-holepair is formed. Unstoichiometry transition metal oxides, such as MnOx are hole-trapping co-catalysts that promote oxidation processes.This research reported the sol-gel synthesis of ZnO nanostructured films co-catalytic modified with MnOx for organic dye degradation. The confirmed features of ZnO/MnOx films are characterized by different analytical tools such as atomic force microscopy (AFM), X-ray diffraction analysis (XRD) and UV-Vis spectroscopy. The surface of the zinc oxide revealed a hexagonal wurtzite structure and a visible ganglia-like pattern. MnOx co-catalytic modification plays a vital role in the percent degradation of the organic dye under UV-irradiation conditions.

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Section: Inntroductionmentioning

confidence: 99%

ENHANCED PHOTOCATALYTIC PROPERTIES OF MnOx CO-CATALYTIC MODIFIED ZnO NANOSTRUCTURED FILMS FOR ORGANIC DYE DEGRADATION

Ivanova,

Simeonova,

Kaneva

2024

JCTM

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“…ZnO thin films have been extensively studied for resistive switching applications due to their unique properties, including high transparency, low cost, compatibility with existing metal oxide semiconductor technology and ease of synthesis. [16][17][18][19][20] The resistive switching behavior in ZnO thin films is attributed to the formation and rupture of conductive filaments within the material, which can be controlled by the application of an external electric field. The formation of these filaments is thought to be due to the migration of oxygen vacancies, which can result in the creation of conductive paths.…”

Section: Introductionmentioning

confidence: 99%

“…In resistive switching, a conductive filament is formed within the material, connecting the electrodes and altering the resistance of the material. ZnO thin films have been extensively studied for resistive switching applications due to their unique properties, including high transparency, low cost, compatibility with existing metal oxide semiconductor technology and ease of synthesis [16–20] . The resistive switching behavior in ZnO thin films is attributed to the formation and rupture of conductive filaments within the material, which can be controlled by the application of an external electric field.…”

Section: Introductionmentioning

confidence: 99%

Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applications

Chawla,

Pandey,

Rao

et al. 2023

ChemistrySelect

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Resistive switching characteristics of ZnO‐based nanomaterials make them useful candidates for applications in resistive random access memory (RRAM). In the present work, Nb‐doped ZnO thin films prepared using RF sputtering with varying doping concentrations were studied using XRD, UV‐Vis spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X‐ray Spectroscopy (EDS), I‐V, XPS and AFM measurements to investigate the structural, optical, electrical properties and roughness of the films. The XRD analysis revealed a shift in the (002) peak corresponding to hexagonal wurtzite structure, towards lower angles with increasing doping concentration, indicating a doping‐induced modification of crystal structure. The UV‐Vis spectroscopy showed an increase in the band gap energy with increasing doping concentration. The electrical conductivity of the films was found to increase with doping concentration, as determined by I‐V measurements. The XPS analysis confirmed the presence of Nb in the doped films and provided information on the chemical states of the elements. Overall, the results suggest that Nb doping can significantly modify the structural properties of ZnO thin films which alters the electrical properties to match the requirements for potential applications in memory devices.

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“…ZnO is an attractive semiconductor with unique and fascinating wide range of properties [1,2]. Thus, it has been employed to develop many applications including UV photodetectors, acoustic devices, optoelectronic devices, gas sensors, chemical sensors, light sensors, spintronics, varistors, ceramic matrices, solar cells and non-volatile memories [1][2][3][4][5]. Also, ZnO is employed as photocatalyst to treat the water or surfaces from the toxic byproducts and organic dyes due to high concentration and fast mobility of photogenerated carriers which transfer swiftly from the photocatalyst to the dye [2,[5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the structural and optical properties of ALD grown ZnO thin films for photocatalytic applications: thickness dependence

Shenouda¹,

Saif²,

Baradács³

et al. 2022

Phys. Scr.

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Thin films of ZnO with different thicknesses (ranging from 8 to 40 nm) have been prepared by plasma-enhanced atomic layer deposition. Grazing incidence X-ray diffraction shows the nano-crystalline structure of the films with high degree of disorder. The films have also lattice oxygen and non-lattice oxygen where the film with 20 nm thickness has the highest percentage of the non-lattice oxygen. These films have indirect optical transitions. The energy gap increases slightly with decreasing the film thickness (2.96, 3.03 and 3.16 eV for the thicknesses 40, 20 and 8 nm, respectively). These films have strong photocatalytic activity to treat the water from the organic dyes such as Levafix Brilliant Red. The film with thickness 20 nm has the optimum photocatalytic activity and the lowest contact angle with water. The photoinduced super-hydrophilic nature of ZnO film (20 nm) renders this film suitable for antifogging application. The high photocatalytic activity and super-hydrophilicity are due to the low recombination rate of charge carriers accompanied to the excess of oxygen vacancies and the high degree of structural disorder.

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Optical properties and bipolar resistive switching of ZnO thin films deposited via DC magnetron sputtering

Cited by 7 publications

References 33 publications

ENHANCED PHOTOCATALYTIC PROPERTIES OF MnOx CO-CATALYTIC MODIFIED ZnO NANOSTRUCTURED FILMS FOR ORGANIC DYE DEGRADATION

ENHANCED PHOTOCATALYTIC PROPERTIES OF MnOx CO-CATALYTIC MODIFIED ZnO NANOSTRUCTURED FILMS FOR ORGANIC DYE DEGRADATION

Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applications

Optimization of the structural and optical properties of ALD grown ZnO thin films for photocatalytic applications: thickness dependence

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