Optical properties and bridge photodetector integration of lead sulfide nanowires

Kim, Jungdong; Oh, Eunsoon; Xiao, Rui; Ritter, Sean; Yang, Yiming; Yu, Dong; Im, Ju Hee; Kim, Sang Hyuk; Choi, Won Jun; Park, Jae–Gwan

doi:10.1088/1361-6528/aa8fa5

Cited by 10 publications

(10 citation statements)

References 16 publications

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“…The fast rise was from the influence of the internal electric (drift) field due to the Schottky barrier formed between Ti and PbS (top right inset of Figure 3a). The Schottky barrier characteristics of Ti and PbS have been reported earlier [22,23,36,37]. As the laser was turned off, a sharp fall of the photocurrent transient was observed.…”

Section: Discussionsupporting

confidence: 65%

“…The slow rise and slow decay transients may be due to trapping and de-trapping of photo-carriers in the PbS grain boundaries. We reported slow rise and slow decay transients in lateral photoconductive devices using PbS nanowires grown on Ti substrates, where the slow components were attributed to electron trapping and de-trapping in PbS nanowires [ 36 ].…”

Section: Discussionmentioning

confidence: 99%

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Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Ampadu

Kim

2021

Nanomaterials

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We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

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Section: Discussionsupporting

confidence: 65%

Section: Discussionmentioning

confidence: 99%

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Ampadu

Kim

2021

Nanomaterials

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“…We demonstrated Schottky characteristics of PbS nanowires with several metals in our earlier papers [17,19,28,29]. In this paper, we discuss Schottky photovoltaic infrared detectors using PbS films, where the bottom metal electrodes form Schottky contacts with PbS films, using silver nanowires as top transparent electrodes.…”

Section: Introductionmentioning

confidence: 98%

“…Lead sulfide has been studied for infrared photodetectors [15][16][17][18][19][20][21][22] and multi-junction solar cells [23] due to its narrow bandgap (∼3 μm in bulk). PbS films have been produced by various growth techniques, such as chemical bath deposition (CBD) [24][25][26] and electrochemical deposition [27].…”

Section: Introductionmentioning

confidence: 99%

Photocurrent spectra from PbS photovoltaic infrared detectors using silver nanowires as plasmonic nano antenna electrodes

et al. 2018

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We discussed structural and electrical properties of PbS films deposited by chemical bath deposition. The crystallite size of our films measured by transmission electron microscope was as large as 0.2 μm in a lateral direction and 1 μm in a vertical direction, and we obtained a high mobility value of 60 cm 2 V −1 s −1 at room temperature. We also demonstrated PbS photovoltaic infrared detectors using silver nanowires as transparent electrodes, whose spectral response was measured by Fourier transform infrared spectrometer. The cut-off wavelength was ∼3 μm at room temperature and ∼4 μm at 10 K. At 100 K, a pronounced photocurrent peak was observed at λ=3.7 μm. Using finite difference time domain simulations, we demonstrated that silver nanowires worked as nano antennas for generating surface plasmons, resulting in the enhancement of photocurrent. The pronounced photocurrent peak wavelength corresponds to the wavelength where the silver nanowires were located near the constructive interference.

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“…14 Xu et al 15 prepared n-Si/p-PbS heterojunction photodetectors by spin-coating p-type PbS quantum dots layer by layer on Si substrates. The detectivity under 1540 nm laser irradiation was as high as 1.47 × 10 11 Jones, indicating that the Si-based substrate provides an excellent platform for integrated electronics, but there is still space for further optimization of the device structure.…”

Section: ■ Introductionmentioning

confidence: 99%

Growth of Si/PbS Heterostructure Infrared Photodetectors for NIR Detection

Zhang,

Yang,

et al. 2024

ACS Photonics

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Lead sulfide (PbS), as an excellent narrow band gap material, has a wide range of applications in short-wave infrared detection. In this study, Si/PbS photodetectors are fabricated by an electrochemical deposition technique to grow PbS materials inside a patterned silicon window. The deposited PbS materials were characterized using SEM, TEM, and XRD. The PbS morphology and particle size were investigated by varying the electrochemical deposition time and precursor solution concentration ratio to assess the photoelectric properties. The results show that the size and thickness of the PbS material decrease with the increase of sulfur content, which also affects the photoelectric performance of the detector. When Pb: S = 1:1, the specific detectivity reaches its maximum value of 1.3 × 10 9 Jones. With the increase of the sulfur content, the responsivity and detectivity of the device decrease, but the response time is reduced. When Pb: S = 1:9, the response/recovery time is 0.25 s/0.23 s, while the dark current is as low as 1.58 × 10 −8 A. This method of optimizing the performance by modulating the size and thickness of the PbS material provides a novel approach for the development of Si/PbS heterostructure photodetectors.

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Optical properties and bridge photodetector integration of lead sulfide nanowires

Cited by 10 publications

References 16 publications

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Photocurrent spectra from PbS photovoltaic infrared detectors using silver nanowires as plasmonic nano antenna electrodes

Growth of Si/PbS Heterostructure Infrared Photodetectors for NIR Detection

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