Optical properties of 4H–SiC

Abstract

Articles you may be interested inSize dependent optical properties of Si quantum dots in Si-rich nitride/Si3N4 superlattice synthesized by magnetron sputtering Influence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O 2 synthesized by Si ion implantationThe optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method. We present the real and imaginary parts of the dielectric functions, resolved into the transverse and longitudinal photon moment a, and we show that the anisotropy is small in 4H-SiC. The measurements and the calculations fall closely together in a wide range of energies.

Electronic and optical properties of lead iodide

“…Additionally, from transmission ͑TR͒ data we have observed a broad spectrum spanning the wavelength interval, 850-360 nm corresponding to photon energies from 1.46 to 3.44 eV. The experimental apparatus is shown in our previous article by Ahuja et al 9 The temperature dependence of the optical absorption ͑ABS͒ was measured by the following procedures.…”

“…Basis functions, electron densities, and potentials were calculated without any geometrical approximation. 9 These quantities were expanded in combinations of spherical harmonic functions ͑with a cutoff ᐉ max ϭ8) inside nonoverlapping spheres surrounding the atomic sites ͑muffin-tin spheres͒ and in a Fourier series in the interstitial region. The muffin-tin spheres occupied approximately 60% of the unit cell.…”

Electronic and optical properties of SiC polytypes using a transferable semi‐empirical tight‐binding model

“…Due to the problem of sample availability, most measurements have been on 6H SiC and 3C SiC [31][32][33][34]. Very recently, some measurements on 4H SiC have also been reported [32][33][34][35][36]. There are considerable variations in the measured optical properties mainly because the photon energy is limited to less than 6.6 eV using the popular ellipsometry technique.…”

“…The optical and spectroscopic properties of SiC polymorphs have also been investigated by many groups both experimentally [30][31][32][33][34][35] and theoretically [36][37][38][39][40]. Due to the problem of sample availability, most measurements have been on 6H SiC and 3C SiC [31][32][33][34].…”

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

“…[6][7][8] They are also being increasingly used to study properties of new materials particularly those produced by doping SiC. From DFT derivations, it was concluded that Ni doping of SiC 9 could improve the photoabsorption efficiency and conductivity of 3C SiC.…”