Optical properties of a-Si films for 157-nm lithography

Kim, Sungkwan; Kim, Yang–Soo; Kang, Myung-Ah; Sohn, Jung Min; No, Kwangsoo

doi:10.1117/12.504180

Cited by 2 publications

(1 citation statement)

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“…According to the extinction coefficients of amorphous silicon ( k ≈ 0 [17]) and amorphous Sb 80 Te 20 ( k ≈ 2.0 [1]) at a wavelength of 840 nm, the penetration depth of laser in the sample can be estimated as being approximately 33nm. As a result, the single- and double-period samples are penetrated by the laser, but the ten-period sample almost cannot be penetrated.…”

Section: Resultsmentioning

confidence: 99%

Effect of periodic number of [Si/Sb80Te20] x multilayer film on its laser-induced crystallization studied by coherent phonon spectroscopy

et al. 2012

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The periodic number dependence of the femtosecond laser-induced crystallization threshold of [Si(5nm)/Sb80Te20(5nm)]x nanocomposite multilayer films has been investigated by coherent phonon spectroscopy. Coherent optical phonon spectra show that femtosecond laser-irradiated crystallization threshold of the multilayer films relies obviously on the periodic number of the multilayer films and decreases with the increasing periodic number. The mechanism of the periodic number dependence is also studied. Possible mechanisms of reflectivity and thermal conductivity losses as well as the effect of the glass substrate are ruled out, while the remaining superlattice structure effect is ascribed to be responsible for the periodic number dependence. The sheet resistance of multilayer films versus a lattice temperature is measured and shows a similar periodic number dependence with one of the laser irradiation crystallization power threshold. In addition, the periodic number dependence of the crystallization temperature can be fitted well with an experiential formula obtained by considering coupling exchange interactions between adjacent layers in a superlattice. Those results provide us with the evidence to support our viewpoint. Our results show that the periodic number of multilayer films may become another controllable parameter in the design and parameter optimization of multilayer phase change films.

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Section: Resultsmentioning

confidence: 99%

Effect of periodic number of [Si/Sb80Te20] x multilayer film on its laser-induced crystallization studied by coherent phonon spectroscopy

et al. 2012

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Characterization of Femtosecond laser-irradiation crystallization and structure of multiple periodic Si/Sb_80Te_20 nanocomposite films by coherent phonon spectroscopy

Zhu¹,

Wang²,

Sun³

et al. 2011

Opt. Express

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Multiple parameters of nanocomposite Si/Sb₈₀Te₂₀ multilayer films are possibly optimized simultaneously to satisfy the development of ideal phase-change memory devices by adjusting chemical composition and physical structure of multilayer films. The crystallization and structure of the films are studied by coherent phonon spectroscopy. Laser irradiation power dependence of coherent optical phonon spectroscopy reveals laser-induced crystallization of the amorphous multilayer film, while coherent acoustic phonon spectroscopy reveals the presence of folded acoustic phonons which suggests a good periodic structure of the multilayer films. Laser irradiation-induced crystallization shows applicable potentials of the multilayer films in optical phase change storage.

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Optical properties of a-Si films for 157-nm lithography

Cited by 2 publications

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Effect of periodic number of [Si/Sb80Te20] x multilayer film on its laser-induced crystallization studied by coherent phonon spectroscopy

Effect of periodic number of [Si/Sb80Te20] x multilayer film on its laser-induced crystallization studied by coherent phonon spectroscopy

Characterization of Femtosecond laser-irradiation crystallization and structure of multiple periodic Si/Sb_80Te_20 nanocomposite films by coherent phonon spectroscopy

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