Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition

Alevli, Mustafa; Ozgit, Cagla; Dönmez, İnci; Bıyıklı, Necmi

doi:10.1116/1.3687937

Cited by 38 publications

(20 citation statements)

References 25 publications

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“…6). The n = 1.96 obtained at 630 nm for a film grown at τ PE = 6 s is close to the level reported by Alevli et al [19]. The refractive index increases slightly with decreasing nitrogen concentration in the plasma gas mixture (Fig.…”

Section: Resultssupporting

confidence: 90%

Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

et al. 2015

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Aluminum nitride films have been grown by plasma enhanced atomic layer deposition under self limiting growth and CVD like conditions. The films have been characterized by IR spectroscopy, ellipsome try, and Auger exposure spectroscopy. We have examined the influence of the deposition temperature, the reactor purge time after exposure to trimethylaluminum vapor, and the plasma exposure time on the growth rate and composition of the films. Under the deposition conditions studied, the growth rate ranged from 0.1 to 0.26 nm per cycle and the refractive index of the films was 1.52 to 1.98. We obtained films with an aluminum to nitrogen atomic ratio near unity.

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Section: Resultssupporting

confidence: 90%

Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

et al. 2015

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“…The full width at half maximum (FWHM) for the LO mode has been previously correlated to the degree of order in amorphous and poly-crystalline AlN films as well as other properties such as thermal conductivity which will be discussed in more detail later. 168,173 In addition to the Al-N band, the T-FTIR spectrum for the PEALD AlN film also shows smaller absorption bands at 2110 and 3200 cm -1 that are related to Al-H and N-H stretching modes, respectively. 170 The clear presence of these absorption bands in the PEALD T-FTIR spectrum is consistent with the significant amount of hydrogen detected by NRA-RBS in this film.…”

Section: Elemental Composition-mentioning

confidence: 99%

“…Error propagation typically leads to a 6 to 7 percent uncertainty when the absolute contents (in atoms/cm 2 ) are expressed in atomic percent. spectra from PEALD, 161,168 PECVD, 169,170 CVD, 171 and sputter 172,173 deposited AlN films. The absorption band at 670 cm -1 in AlN materials is generally attributed to the four fold-coordinated Al-N stretching mode.…”

Section: Elemental Composition-mentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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“…Furthermore, these films were extremely smooth and showed good optical and electrical characteristics. Optical properties of these AlN thin films were investigated in detail by Alevli et al (13). We also demonstrated conformality of the AlMe 3 -NH 3 plasma PEALD process by fabricating high surface area AlN hollow nanofibers, which might potentially be used in hightemperature ambient chemical sensing applications (14).…”

Section: Introductionmentioning

confidence: 89%

(Invited) Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films

2013

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AlN and GaN thin films were deposited by plasma-enhanced atomic layer deposition using trimethylmetal precursors. The films were found to have high oxygen incorporation, which was attributed to oxygen contamination related to the plasma system. The choice of nitrogen containing plasma gas (N 2 , N 2 /H 2 or NH 3 ) determined the severity of oxygen incorporation into deposited films. Lowest oxygen concentrations were attained for AlN and GaN thin films using NH 3 and N 2 plasma, respectively. Initial experiments have shown that GaN thin films with low impurity concentrations can be deposited when plasma-related oxygen contamination is avoided by the use of an alternative plasma source.

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Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition

Cited by 38 publications

References 25 publications

Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

(Invited) Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films

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