2016
DOI: 10.1016/j.jtusci.2015.03.012
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Optical properties of amorphous Li2O–WO3–B2O3 thin films deposited by electron beam evaporation

Abstract: (2016) Optical properties of amorphous Li 2 O-WO 3-B 2 O 3 thin films deposited by electron beam evaporation,

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Cited by 21 publications
(6 citation statements)
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“…The optical absorption coefficient ( α ) as opposed to wavelength (λ) is described as the power portion, which is absorbed per unit length of a medium. The α is assessed from the absorption data investigation using the giving equation [ 6 , 36 , 49 ] where d and A are the thickness of the samples and the absorbance, respectively; then α can also be defined as a measure of the ability of materials to absorb light photons [ 50 ]. Optical absorption examination offers insight into the solid’s band structure.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The optical absorption coefficient ( α ) as opposed to wavelength (λ) is described as the power portion, which is absorbed per unit length of a medium. The α is assessed from the absorption data investigation using the giving equation [ 6 , 36 , 49 ] where d and A are the thickness of the samples and the absorbance, respectively; then α can also be defined as a measure of the ability of materials to absorb light photons [ 50 ]. Optical absorption examination offers insight into the solid’s band structure.…”
Section: Resultsmentioning
confidence: 99%
“…Based on the analysis of the α , it is possible to calculate the optical energy band gap (E g ) of the pure PEO as well as PEO/SnTiO 3 NC.To assess the energy gap of the films, Tauc’s relationship can be applied as shown below [ 6 , 50 , 64 ]: where B isthe constant inside the range of visible frequency and the γ exponent is employed in specifying the electron transitions nature and is reliant on the density of states distribution. γ = 2 or 1/2 to show indirect allowed transition and direct allowed transition, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Regarding amorphous semiconductors with indirect transitions, there is no conservation of electronic momentum when moving from the valence to the conduction band [ 105 ]. The following relationship provides the absorption coefficient for direct band gap materials [ 106 ]: where hυ stands for photon energy, B is a constant, and E g stands for the OBG energy, while the coefficient n defines the type of electronic transitions that lead to absorption [ 107 ]. Depending on the types of transition, the coefficient n can be 2, 2/3,1/2, or 1/3, corresponding to direct allowed, direct forbidden, indirect allowed, and indirect forbidden transitions, respectively, as shown clearly in Figure 17 [ 96 ].…”
Section: Absorption Coefficient Studymentioning
confidence: 99%
“…where, "hν" represents photon energy, "B" is a constant, and the coefficient "m" decides the type of electronic transitions that result in absorption. 31 Figure 4 clearly illustrates that the coefficient "m" can take on different values (2, 2/3, 1/2, or 1/3) depending on the type of transition, namely direct allowed, direct forbidden, indirect allowed, or indirect forbidden transitions. 32 By analyzing the linear sections of (αhν) m in Figure 5a-d and where they intercept the photon energy axis (hν), it is possible to determine the value of E g .…”
Section: Tauc's Model For Band Gap Studymentioning
confidence: 99%