1967
DOI: 10.1143/jpsj.23.581
|View full text |Cite
|
Sign up to set email alerts
|

Optical Properties of Anthracene Single Crystals

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
19
0

Year Published

1969
1969
2024
2024

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 43 publications
(20 citation statements)
references
References 15 publications
1
19
0
Order By: Relevance
“…Therefore, the radius 50 A is sufficient for our purpose. This value is reasonable, compared with that calculated by Matsui 42 for anthrancene. Consideration of electron density did not cause much difference in the results in comparison with the case in which the charge was distributed uniformly at the atomic sites.…”
Section: Oscillator Strength Obtained From Reflection Spectrasupporting
confidence: 89%
“…Therefore, the radius 50 A is sufficient for our purpose. This value is reasonable, compared with that calculated by Matsui 42 for anthrancene. Consideration of electron density did not cause much difference in the results in comparison with the case in which the charge was distributed uniformly at the atomic sites.…”
Section: Oscillator Strength Obtained From Reflection Spectrasupporting
confidence: 89%
“…14,15 An orthorhombic dielectric tensor was used with z0 = 2.9, while y0 ϵ a and x0 ϵ b were taken from Ref. 16. An exact calculation accounting for the monoclinic structure would require knowledge of the frequency dependent Euler angles.…”
mentioning
confidence: 99%
“…Other workers 5 • 6 have not observed such lines in their reflection studies, but this may have been due to the high temperatures (298, nOK) and the inadequate resolution used by them. In view of the importance of this question we have investigated the reflection spectra of anthracene crystals of different thicknesses and from different sources at high resolution and low temperature.…”
Section: Introductionmentioning
confidence: 93%
“…Specifically, following Rashba and Gurgenishvili,58 the oscillator strength of the transition to the bound exciton state and the oscillator strength of the transition to the intrinsic exciton band are related by (6) where E is the binding energy of the exciton to the impurity or defect state, Eo is (21i}/m*) ('IT/Q o )2/3, where m* is the effective mass of the intrinsic exciton, and Q o is the volume of the unit cell. In this region of the spectrum there is strong pumping of the oscillator strength of the transition to the exciton band to the transitions to defect levels.…”
Section: Intensities Of the Diminished Reflectance (Defect) Linesmentioning
confidence: 99%