Optical properties of chemically deposited Bi2S3 thin films

Al-Douri, A.A.J.; Madik, Maria P.

doi:10.1016/s0960-1481(00)00082-3

Cited by 5 publications

(5 citation statements)

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“…is the momentum matrix element. Similarly, we get the expression for the second order susceptibility [75]: [68] b Ref [69] c Ref [70] d Ref [71] e Ref [72] f Ref [24] g Ref [27] h Ref [23] ı Ref [22] Fig . 2 The total and projected density of states for Bi 2 S 3 that includes contributions of interband and intraband transitions to the second order susceptibility.…”

Section: Optical Propertiesmentioning

confidence: 99%

Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations

et al. 2014

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The structural, mechanical, electronic, and optical properties of orthorhombic Bi 2 S 3 and Bi 2 Se 3 compounds have been investigated by means of first principles calculations. The calculated lattice parameters and internal coordinates are in very good agreement with the experimental findings. The elastic constants are obtained, then the secondary results such as bulk modulus, shear modulus, Young's modulus, Poisson's ratio, anisotropy factor, and Debye temperature of polycrystalline aggregates are derived, and the relevant mechanical properties are also discussed. Furthermore, the band structures and optical properties such as real and imaginary parts of dielectric functions, energy-loss function, the effective number of valance electrons, and the effective optical dielectric constant have been computed. We also calculated some nonlinearities for Bi 2 S 3 and Bi 2 Se 3 (tensors of elasto-optical coefficients) under pressure.

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Section: Optical Propertiesmentioning

confidence: 99%

Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations

et al. 2014

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“…3b is not used. The optical loss due to high reflectance of Bi 2 S 3 /c-Si structure is associated with the high refractive index (5.1) of Bi 2 S 3 in the visible region, 46,47 on which TiO 2 and SiO 2 would as well function as a non-reflective coating. However, these materials/techniques were not available to us.…”

Section: Resultsmentioning

confidence: 99%

Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells

Becerra

Nair

2011

J. Electrochem. Soc.

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Feasibility of combining p-type crystalline Si (c-Si) of 200–8000 nm in thickness with an n-type bismuth sulfide (Bi2S3) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (105 cm−1) of Bi2S3 results in a light-generated current density (JL ) of >20 mA/cm2 for a c-Si(200 nm)/Bi2S3(300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (Voc ) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 Ω cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi2S3 on (p) c-Si, Jsc is 3 mA/cm2; Voc is 360 mV; and η is 0.5%; which improved to: 7.2 mA/cm2, 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb2S3 (40 nm) thin film as an antireflective coating on Bi2S3, produced: Jsc of 10 mA/cm2; Voc of 480 mV; and η of 2.4%. Theoretical simulation suggests that better cell fabrication could lead to: Jsc of 26 mA/cm2; Voc of 600 mV; and η of 10%.

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“…Besides, photodetectors using Bi 2 Te 3 − and WS 2 and topological insulators using HgTe, Bi 2 X 3 (X = Se, Te), − and SnTe are other notable examples of the unique spin–orbit coupling in heavy-metal chalcogenides. Bismuth sulfide (Bi 2 S 3 ), an analogue of Bi 2 Te 3 with superior thermoelectric properties, , is potentially suitable for optoelectronic applications, due to its large Hall mobility (257 cm 2 V –1 s –1 , a thermally evaporated n-doped film) and moderate band gap of 1.3 to 1.6 eV , (dependent on the size and stoichiometry) . In addition, elementally abundant, nontoxic Bi 2 S 3 may be advantageous over commercialized inorganic solar cells such as CdTe and CIGS (Cu–In–Ga–S/Se) as well as emerging lead halide perovskite (LHP) solar cells, − which have record high-power conversion efficiencies (PCEs) .…”

mentioning

confidence: 99%

mentioning

confidence: 99%

“…The valence band maximum of the film was determined to be −5.48 eV by photoelectron yield spectroscopy (PYS, Supporting Figure S6), giving a conduction band minimum of −4.09 eV. The linear absorption coefficient at 900 nm and Urbach tail energy were 1.7 × 10 4 cm −1 (for either a direct 21,48 or indirect 22 transition) and 0.14 eV, respectively, which were inferior to those of LHPs (>10 4 cm −1 and ∼15 meV, respectively); 49 however, the wide coverage in the visible-light region is promising for optoelectronic device applications. The most pronounced effect observed for the CASC process was the improved AFM morphology (see Figure 2e), which showed large, closely packed crystal grains (with size L = 50− 400 nm) with a root-mean-square surface roughness (R a ) as small as 1.7 nm (Table 1).…”

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confidence: 99%

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Solution-Processed Bi₂S₃ Photoresistor Film To Mitigate a Trade-off between Morphology and Electronic Properties

Nishikubo

Saeki

2018

J. Phys. Chem. Lett.

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Bismuth sulfide (BiS) is an attractive 2D layered, visible-light-absorbing semiconductor composed of nontoxic, abundant elements. Improving the quality of a BiS film for device applications while maintaining its intrinsic electronic properties is a challenge, as conventional film fabrication processes require a trade-off due to the uncontrolled nucleation and growth steps. We report a novel procedure for BiS film formation involving spin-coating of a precursor solution of bismuth acetate and thiourea, followed by crystallization under diluted HS gas. This two-step process produced a large-grained (<400 nm), smooth (surface roughness = 1.7 nm), and highly pure BiS film with a layer-stacked structure on a substrate. Most importantly, the film exhibited a moderate Hall effect electron mobility (∼7 cm V s) and excellent performance as a photoresistor with improved photoconductance and on-off ratio compared with those prepared by conventional methods. Our approach provides a versatile route for the development of metal sulfide semiconductors for optoelectronic devices.

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Optical properties of chemically deposited Bi2S3 thin films

Cited by 5 publications

References 3 publications

Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations

Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations

Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells

Solution-Processed Bi₂S₃ Photoresistor Film To Mitigate a Trade-off between Morphology and Electronic Properties

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Optical properties of chemically deposited Bi2S3 thin films

Cited by 5 publications

References 3 publications

Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations

Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations

Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells

Solution-Processed Bi2S3 Photoresistor Film To Mitigate a Trade-off between Morphology and Electronic Properties

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Product

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Solution-Processed Bi₂S₃ Photoresistor Film To Mitigate a Trade-off between Morphology and Electronic Properties