2002
DOI: 10.1002/1521-396x(200209)193:1<53::aid-pssa53>3.0.co;2-5
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Optical Properties of Crystalline Ta2O5 Thin Films

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Cited by 16 publications
(15 citation statements)
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“…Despite the fact that both passive films have similar stoichiometries, the predominance of more oxygen defects between these two oxides can be accounted for the different structure and lattice parameter values. Thus, Nb 2 O 5 has a tetragonal structure with a = 20.01 Å and c = 3; and Ta 2 O 5 is orthorhombic, a = 6.117 Å, b = 3.716 Å, c = 4.114 Å [34][35][36]. This difference in height between two faces in the tetragonal structure could be the explanation behind why the oxygen vacancy diffusivity for the Nb 2 O 5 is higher in comparison with Ta 2 O 5 .…”
Section: Kinetic Parameters Describing the Electrochemical Behavior Omentioning
confidence: 99%
“…Despite the fact that both passive films have similar stoichiometries, the predominance of more oxygen defects between these two oxides can be accounted for the different structure and lattice parameter values. Thus, Nb 2 O 5 has a tetragonal structure with a = 20.01 Å and c = 3; and Ta 2 O 5 is orthorhombic, a = 6.117 Å, b = 3.716 Å, c = 4.114 Å [34][35][36]. This difference in height between two faces in the tetragonal structure could be the explanation behind why the oxygen vacancy diffusivity for the Nb 2 O 5 is higher in comparison with Ta 2 O 5 .…”
Section: Kinetic Parameters Describing the Electrochemical Behavior Omentioning
confidence: 99%
“…From the reflectance data the energy band gap value can be calculated using Tauc method, and also the calculation of BST refraction index [23,24]. Measurement of BST solar cell using LCR meter [27,29].…”
Section: Bst Solar Cell Characterizationmentioning
confidence: 86%
“…The relationship between reflectance and refraction index of materials is shown in Equation (6) [25,26]: Figure 3 shows electrical conductivity values of semiconductor material in the range of 10 8 to 10 3 S/cm [27,29]. Photoconductivity is an electrical conductivity resulting from excited electrons because of energy absorbed by the electrons from photons that are incident on the electrons at the semiconductor valence band.…”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…The dependence of crystallite size on o is not clearly determined. Some previous studies showed that the crystallite size increases with o [23] while others indicated an opposite behavior [18]. Moreover, there was a reduction of crystallite size for the higher annealing temperature (200 1C).…”
Section: Structure Of the Filmsmentioning
confidence: 99%