Optical properties of electron beam and -ray irradiated InGaAs/GaAs quantum well and quantum dot structures

Aierken, Abuduwayiti; Guo, Qi; Huhtio, Teppo; Sopanen, Markku; He, Chengfa; Li, Yudong; Wen, Liping; Ren, Dazhong

doi:10.1016/j.radphyschem.2012.09.022

Cited by 16 publications

(9 citation statements)

References 24 publications

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“…The irradiation experiment was performed at room temperature using an EN tandem electrostatic accelerator at Peking University. A flux of 6.4Â10 9 p/cm 2 was used to accumulate the total fluence to 3.2Â10 14 p/cm 2 . The 10 MeV protons can completely penetrate the VCSEL up to the GaAs substrate, according to MULASSIS calculations [18].…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Many studies have been conducted on the parameter degradation of VCSELs under radiation. The radiation sources used include gamma rays, neutrons, protons, electrons, and heavy ions [ 11 , 12 , 13 , 14 , 15 ]. Although the earlier studies qualitatively explored experimental rules, later studies examined the physical mechanism of GaAs/AlGaAs material degradation [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

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Annealing effects of 850 nm vertical-cavity surface-emitting lasers after proton irradiation

Chen

Maliya

et al. 2022

Heliyon

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Annealing effects of 850 nm vertical-cavity surface-emitting lasers after proton irradiation

Chen

Maliya

et al. 2022

Heliyon

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“…There are very few studies dealing only with the influence of electron irradiation on the properties of GaAs-based devices [7][8][9][10]. GaAs/AlGaAs quantum wells were studied after 1 MeV electron irradiation in [7].…”

Section: Jinst 9 C04036mentioning

confidence: 99%

“…The observed current decrease with increasing fluence was explained by the irradiation-introduced electron traps causing a negative space charge in the barrier. In the case of the InGaAs/GaAs quantum well exposed to 1 MeV electron beam, the carrier lifetime and photoluminescence intensity decrease with the irradiation dose were attributed to the carrier capture by irradiation-induced defects before reaching the quantum well [8]. In [9], the radiation resistance of GaAs solar cells to 1 MeV electrons was investigated.…”

Section: Jinst 9 C04036mentioning

confidence: 99%

GaAs detectors irradiated by low doses of electrons

Šagátová¹,

Затько²,

Pavlovič³

et al. 2014

J. Inst.

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Semi-insulating (SI) GaAs detectors were irradiated by 5 MeV electrons up to a dose of 69 kGy, in order to test their radiation hardness. The electric and spectrometric stability of detectors was examined as a function of the absorbed dose. Investigated detectors showed a very good detector radiation resistance within a dose up to 40 kGy followed by deterioration of some spectrometric and electric properties. However, the reverse current and the detector charge collection efficiency showed minimum changes with the overall applied doses. The obtained results will be used as a preliminary study for further radiation-hardness investigations of GaAs detectors against high energy electrons. This will complete our previous studies of GaAs detector radiation hardness against fast neutrons and γ-rays.

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“…The search for a radiation-hard semiconductor material and material structure has long been performed and the effort continues to progress along with the development of new semiconductor technology. To date, some of the materials and material structures deemed radiation-hard include; SiC pn-junction, III-V nitride-based heterostructure, InAs/GaAs quantum dot (QD) and InGaAs quantum well (QW) [6][7][8]. For optoelectronics purposes, it was reported that GaN and InAs/GaAs QD based diodes are less susceptible to radiation damage compared to other structures [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Radiation Performance of Gan and Inas/Gaas Quantum Dot Based Devices Subjected to Neutron Radiation

Fauzi

Rashid

Zin

et al. 2017

IIUMEJ

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In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3Ã—1013 to 6Ã—1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

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Optical properties of electron beam and -ray irradiated InGaAs/GaAs quantum well and quantum dot structures

Cited by 16 publications

References 24 publications

Annealing effects of 850 nm vertical-cavity surface-emitting lasers after proton irradiation

Annealing effects of 850 nm vertical-cavity surface-emitting lasers after proton irradiation

GaAs detectors irradiated by low doses of electrons

Radiation Performance of Gan and Inas/Gaas Quantum Dot Based Devices Subjected to Neutron Radiation

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