Optical properties of free-standing GaAs semiconductor nanowires and their dependence on the growth direction

Redlinski, Pawel; Peeters, F. M.

doi:10.1103/physrevb.77.075329

Cited by 24 publications

(23 citation statements)

References 23 publications

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“…In semiconductor NWs, ε ( ω ) can be modified by size‐dependent quantization effects, along with changes in the excitonic properties and the dielectric confinement of the electric field due to the mismatch between ε ( ω ) for the NW (here denoted by ε s ) and that for the surrounding matrix ( ε l ) 68, 69. Calculations of the electronic band structure 70–72 show that size‐dependent effects are minimal for nearly all of the NWs considered in this paper (with the exception of the quantum confined CdSe NWs discussed in Section 5.1 31) since their radius is substantially larger than the exciton Bohr radius a B , a measure of the spatial extent of the excitonic wave function 65. Excitonic properties are also only nominally affected for NWs with d > 2 a B 68.…”

Section: Linear Optical Properties Of Semiconductor Nanowiresmentioning

confidence: 81%

Ultrafast carrier dynamics in semiconductor nanowires

Prasankumar

Upadhya

Taylor

2009

Physica Status Solidi (b)

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Semiconductor nanowires (NWs) are nanostructures with a number of novel optical and electronic properties that offer great promise for applications in areas including nanoelectronics, thermoelectrics, sensing, and nanophotonics. To realize the full potential of these unique nanosystems, however, a deep understanding of their response to optical excitation on a sub-picosecond time scale is required. Here, we review recent ultrafast optical studies of carrier dynamics in semiconductor NWs. These experiments have been performed on different materials as a function of both intrinsic NW parameters such as diameter and doping as well as experimental parameters including photoexcited carrier density and wavelength. A variety of phenomena, including one-dimensional (1D) exciton dynamics, rapid carrier trapping at surface and bulk defects, and lasing from an electron-hole plasma (EHP) have been observed. These first measurements of ultrafast carrier dynamics are a tantalizing hint of the rich physics yet to be discovered in these quasi-1D systems.Ultrafast optical spectroscopy can track the temporal evolution of carrier populations in semiconductor NWs with femtosecond time resolution.

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Section: Linear Optical Properties Of Semiconductor Nanowiresmentioning

confidence: 81%

Ultrafast carrier dynamics in semiconductor nanowires

Prasankumar

Upadhya

Taylor

2009

Physica Status Solidi (b)

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“…Very recently, the dielectric mismatch effect on the electronic structures, impurity states and excitonic absorption spectrum in various semiconductor nanostructures have been investigated [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Dielectric enhancement of the exciton energies in laser-dressed near-surface quantum wells

Niculescu

Eseanu

2010

Superlattices and Microstructures

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“…Various methods, including density-functional-theory (DFT)2829303132, tight-binding (TB) theory252633343536373839404142, and the theory244344454647484950515253, have been used to calculate the band structure of nanowires. Among them, DFT is the first-principle method which is free from any adjustable parameters, and is therefore often the choice for electronic structure calculations.…”

Section: Methodsmentioning

confidence: 99%

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

Luo

Huang

Liao

et al. 2016

Sci Rep

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The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the 8 × 8 Luttinger-Kohn Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus on the variations of the band-inverted fundamental gap, the hybridization gap, and the effective gap with the core radius and shell thickness of the nanowires. The evolutions of all the energy gaps with the structural parameters are shown to be dominantly governed by the effect of quantum confinement. With a fixed core radius, a band-inverted fundamental gap exists only at intermediate shell thicknesses. The maximum band-inverted gap found is ~4.4 meV for GaSb/InAs and ~3.5 meV for InAs/GaSb core-shell nanowires, and for the GaSb/InAs core-shell nanowires the gap persists over a wider range of geometrical parameters. The intrinsic reason for these differences between the two types of nanowires is that in the shell the electron-like states of InAs is more delocalized than the hole-like state of GaSb, while in the core the hole-like state of GaSb is more delocalized than the electron-like state of InAs, and both favor a stronger electron-hole hybridization.

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Optical properties of free-standing GaAs semiconductor nanowires and their dependence on the growth direction

Cited by 24 publications

References 23 publications

Ultrafast carrier dynamics in semiconductor nanowires

Ultrafast carrier dynamics in semiconductor nanowires

Dielectric enhancement of the exciton energies in laser-dressed near-surface quantum wells

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

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