Optical properties of GaAs

Abstract

We have investigated the optical properties of gallium arsenide (GaAs) in the photon energy range 0.6-6.0 eV. We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV; an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV; the dielectric constant, the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV; the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV; the absorption coefficient which has a maximum value of 0.22 10 8 m 1 at a photon energy of 4.8 eV, the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV; the real part of optical conductivity has a maximum value of 14.2 10 15 at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8 10 15 at 5.0 eV. The values obtained for the optical properties of GaAs are in good agreement with other results.

Thermal emittance and lifetime of alkali-antimonide photocathodes grown on GaAs and molybdenum substrates evaluated in a −300 kV dc photogun

“…Using measured reflectivity values, and solving for n 2 in Eq. 1, index of refraction values of 4.1 and 3.9 were obtained for GaAs and molybdenum, respectively, in reasonably good agreement with published values, 4.0 and 3.75 [26,27]. The published index of refraction for CsK 2 Sb is 3.6 [28] and would provide a reflectivity of about 32%, assuming a smooth photocathode surface, a purely specular reflection, and ignoring the possibility of enhanced reflectivity due to multiple internal reflections within the photocathode thin film.…”

First-principles calculations to investigate mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP

“…It is observed that α(ω) remains almost constant in the energy range 6 -14 eV. The value of absorption coefficient of BaAgP is much larger than that of GaAs (ሺ14-22ሻ×10 4 cm -1 at ~4.8 eV) [69,70] but close to the value for Ba3SbN and Ba3BiN ((120 ×10 4 cm -1 at ~8 eV) [71] and smaller than that of the value for silicon (180×10 4 cm -1 ) [72]. In the visible region, the maximum value of the parallel component of absorption coefficient is 64×10 4 cm -1 and the perpendicular component is 54×10 4 cm -1 .…”

Влияние разориентации подложки и ее предварительного травления на структурные и оптические свойства интегрированных гетероструктур GaAs/Si(100), полученных методом газофазной эпитаксии

“…Как видно из эксперимента, в ИК-спектре отражения гетерострукту-ры #2 присутствует высокоинтенсивная фононная мо-да (TO + LO) Ga−As с формой, характерной для мо-нокристаллического арсенида галлия, а также низко-интенсивный поперечный оптический фонон TO Al−As от верхнего cup-layer гетероструктуры. Частоты при-сутствующих в спектре продольных LO и попереч-ных TO оптических фононов хорошо согласуются с уже существующими литературными данными [19,20]. Что касается ИК-спектров отражения интегрированных гетероструктур GaAs/Si(100), то следует отметить, что в них также присутствуют фононные колебания Ga−As и Al−Ga.…”